STP9NK65Z STMicroelectronics

STP9NK65Z STP9NK65ZFP N-channel 650 V, 1 , 6.4 A, TO-220, TO-220FP Zener-protected SuperMESH Power MOSFET Features R DS(on) Order codes V I Pw DSS D max. STP9NK65Z 650 V < 1.2 6.4 A 125 W STP9NK65ZFP 650 V < 1.2 6.4 A 30 W 100% avalanche tested 3 3 2 Low input capacitance and gate charge 1 2 1 Low gate input resistance TO-220 TO-220FP Extremely high dv/dt and avalanche capabilities Applications Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH technology, achieved through optimization of ST s well established strip-based PowerMESH layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STP9NK65Z P9NK65Z TO-220 Tube STP9NK65ZFP P9NK65ZFP TO-220FP Tube January 2012 Doc ID 8981 Rev 4 1/16 www.st.com 16Contents STP9NK65Z, STP9NK65ZFP Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 3 Test circuits 6 3.1 Electrical characteristics (curves) 7 4 Package mechanical data 10 5 Revision history . 15 2/16 Doc ID 8981 Rev 4