Product Information

STPS1045BY-TR

STPS1045BY-TR electronic component of STMicroelectronics

Datasheet
STMicroelectronics Schottky Diodes & Rectifiers Auto pwr Schottky 10A 45V VRRM 0.57V

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.6767 ea
Line Total: USD 1691.75

2425 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2425 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 2500
Multiples : 2500

Stock Image

STPS1045BY-TR
STMicroelectronics

2500 : USD 0.6767

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Factory Pack Quantity :
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STPS1045B-Y Automotive power Schottky rectifier Features K Negligible switching losses Low forward voltage drop K A Low capacitance A High reverse avalanche surge capability Avalanche specification DPAK AEC-Q101 qualified STPS1045BY j Description Table 1. Device summary I 10 A High voltage Schottky rectifier suited for switch F(AV) mode power supplies and other power converters. V 45 V RRM Packaged in DPAK, this device is intended for use T 175 C j in high frequency circuits where low switching V (max) 0.57 V F losses are required. May 2011 Doc ID 17265 Rev 1 1/7 www.st.com 7Characteristics STPS1045B-Y 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I /pin Forward rms current 7 A F(RMS) I Average forward current T = 150 C = 0.5 10 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 75 A FSM p I Repetitive peak reverse current t = 2 s, F= 1 kHz 1 A RRM p P Repetitive peak avalanche power t = 1 s, T 25 C 4000 W ARM p j = T Storage temperature range -65 to +175 C stg (1) T Operating junction temperature range -40 to +175 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s dPtot 1 --------------- -------------------------- 1. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 3 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - - 100 A j Reverse leakage (1) I V = V R R RRM current T = 125 C - 7 15 mA j T = 25 C - - 0.63 j I = 10 A F T = 125 C - 0.50 0.57 j (2) V Forward voltage drop V F T = 25 C - - 0.84 j I = 20 A F T = 125 C - 0.65 0.72 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.42 x I + 0.015 I F(AV) F (RMS) 2/7 Doc ID 17265 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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