STPS1045BY-TR STMicroelectronics

STPS1045B-Y Automotive power Schottky rectifier Features K Negligible switching losses Low forward voltage drop K A Low capacitance A High reverse avalanche surge capability Avalanche specification DPAK AEC-Q101 qualified STPS1045BY j Description Table 1. Device summary I 10 A High voltage Schottky rectifier suited for switch F(AV) mode power supplies and other power converters. V 45 V RRM Packaged in DPAK, this device is intended for use T 175 C j in high frequency circuits where low switching V (max) 0.57 V F losses are required. May 2011 Doc ID 17265 Rev 1 1/7 www.st.com 7Characteristics STPS1045B-Y 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I /pin Forward rms current 7 A F(RMS) I Average forward current T = 150 C = 0.5 10 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 75 A FSM p I Repetitive peak reverse current t = 2 s, F= 1 kHz 1 A RRM p P Repetitive peak avalanche power t = 1 s, T 25 C 4000 W ARM p j = T Storage temperature range -65 to +175 C stg (1) T Operating junction temperature range -40 to +175 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s dPtot 1 --------------- -------------------------- 1. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 3 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - - 100 A j Reverse leakage (1) I V = V R R RRM current T = 125 C - 7 15 mA j T = 25 C - - 0.63 j I = 10 A F T = 125 C - 0.50 0.57 j (2) V Forward voltage drop V F T = 25 C - - 0.84 j I = 20 A F T = 125 C - 0.65 0.72 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.42 x I + 0.015 I F(AV) F (RMS) 2/7 Doc ID 17265 Rev 1