STPS10150CFP STMicroelectronics

STPS10150C High voltage power Schottky rectifier Datasheet production data Description . This dual center tab Schottky rectifier is suited for high frequency switched mode power supplies . Table 1. Device summary Symbol Value I 2 x 5A F(AV) V 150 V RRM T 175 C j(max) . 3 V 0.69 V F (Typ) . 2 % 77 2 % . % 2 )3 77 2 ) 3 % Features High junction temperature capability Good trade off between leakage current and forward voltage drop Low leakage current Avalanche capability specified Insulated package: TO-220FPAB insulating voltage = 2000V sine RMS ECOPACK 2 compliant component for DPAK on demand April 2015 DocID7754 Rev 7 1/12 This is information on a product in full production. www.st.comCharacteristics STPS10150C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at T = 25 C unless otherwise stated) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 150 V RRM I Forward rms current 10 A F(RMS) TO-220AB, DPAK T = 155 C c Per diode 5 TO-220FPAB T = 145 C c Average forward current, = 0.5, I A F(AV) square wave TO-220AB, DPAK T = 150 C c Per device 10 TO-220FPAB T = 130 C c I Surge non repetitive forward current t = 10 ms sinusoidal 120 A FSM p (1) t = 10 s, T = 125 C P Repetitive peak avalanche power 220 W p j ARM T Storage temperature range -65 to + 175 C stg (2) T Maximum operating junction temperature 175 C j 1. For pulse time duration derating, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 1 dPtot 2. condition to avoid thermal runaway for a diode on its own heatsink < Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit TO-220AB, DPAK 4 Per diode TO-220FPAB 7 R Junction to case th(j-c) TO-220AB, DPAK 2.4 Total C/W TO-220FPAB 5.3 TO-220AB, DPAK 0.7 R Coupling th(c) TO-220FPAB 3.7 When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C -- 2.0 A j (1) I Reverse leakage current V = V R R RRM T = 125 C - 0.40 2.0 mA j T = 25 C - - 0.92 j I = 5A F T = 125 C - 0.69 0.75 j (2) V Forward voltage drop V F T = 25 C -- 1.0 j I = 10 A F T = 125 C - 0.79 0.85 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p 2/12 DocID7754 Rev 7