Product Information

STPS10M60SF

STPS10M60SF electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers DFD THYR TRIAC & RECTIFIER

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8293 ea
Line Total: USD 0.83

6 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

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STPS10M60SF
STMicroelectronics

1 : USD 0.4667
10 : USD 0.4567
30 : USD 0.4487
100 : USD 0.4426

     
Manufacturer
Product Category
RoHS - XON
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Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Cnhts
Hts Code
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STPS10M60SF Datasheet 60 V power Schottky rectifier Features Low profile design package height of 1.1 mm typ. Wettable flanks for automatic visual inspection Low forward voltage drop Avalanche capability ECOPACK 2 compliant Applications Set-top box Battery charger DC / DC converter Notebook adapter Switching diode Description This 60 V Schottky barrier rectifier has been optimized for use in high frequency miniature DC/DC converters, reverse battery protection, battery chargers and adaptors. Packaged in PSMC (TO-277A), the STPS10M60SF provides a high level of performance in a compact and flat package which can withstand very high operating junction temperature. Product status link STPS10M60SF Product summary Symbol Value I 10 A F(AV) V 60 V RRM T (max.) 175 C j V (typ.) 0.53 V F DS12677 - Rev 1 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS10M60SF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified, anode terminals short- circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Average forward current, = 0.5 square pulse T = 145 C 10 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 230 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 258 W ARM p j T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature +175 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Typ. value Unit R Junction to case 2 C/W th(j-c) For more information, please refer to the following application note: AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (anode terminals short-circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 50 A j (1) I Reverse leakage current V = V R RRM R T = 125 C - 8 25 mA j T = 25 C - 0.56 j I = 5 A F T = 125 C - 0.43 0.49 j (2) V Forward voltage drop V F T = 25 C - 0.65 j I = 10 A F T = 125 C - 0.53 0.60 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.38 x I + 0.022 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode DS12677 - Rev 1 page 2/9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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