STPS10M80C Power Schottky rectifier Features A1 K High junction temperature capability A2 Optimized trade-off between leakage current K K and forward voltage drop Low leakage current A2 Avalanche capability specified A2 K Insulated package TO-220FPAB A1 A1 2 insulated voltage: 2000 V 2 D PAK I PAK package capacitance: 45 pF STPS10M80CG-TR STPS10M80CR K Description This dual diode Schottky rectifier is suited for high A1 A2 frequency switch mode power supply. K K A2 2 2 A1 Packaged in TO-220AB, I PAK, D PAK and TO- TO-220AB TO-220FPAB 220FPAB, this device is particularly suited for use STPS10M80CT STPS10M80CFP in notebook, game station, LCD TV and desktop adapters, providing these applications with a good efficiency at both low and high load. (a) Figure 1. Electrical characteristics Table 1. Device summary I V Symbol ValueForwar I I 2 x 5 A 2 x I O X F(AV) V 80 V RRM IF T (max) 175 C j I O X VRRM V (typ) 465 mV F V V AR R V I R V V V V To F(Io) F F(2xIo)Revers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 13. V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics April 2011 Doc ID 018734 Rev 1 1/11 www.st.com 11Characteristics STPS10M80C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, at T = 25 C unless amb otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 80 V RRM I Forward rms current 30 A F(RMS) TO-220AB, T = 160 C Per diode 5 c 2 2 I PAK, D PAK T = 160 C Per device 10 c Average forward current, I A F(AV) = 0.5 T = 150 C Per diode 5 c TO-220FPAB T = 140 C Per device 10 c Surge non repetitive I t = 10 ms sinusoidal T = 25 C 150 A FSM p c forward current (1) P Repetitive peak avalanche power T = 25 C, t = 1 s 4000 W ARM j p Maximum repetitive peak (2) V t < 1 s, T < 150 C, I < 12 A 100 V ARM p j AR avalanche voltage Maximum single pulse (2) V t < 1 s, T < 150 C, I < 12 A 100 V ASM p j AR peak avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 175 C j 1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 13 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit per diode 3.10 TO-220AB 2 2 I PAK, D PAK total 1.88 R Junction to case C/W th(j-c) per diode 5.90 TO-220FPAB total 4.75 TO-220AB 0.65 2 2 I PAK, D PAK R Coupling C/W th(c) TO-220FPAB 3.60 When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) 2/11 Doc ID 018734 Rev 1