Product Information

STPS1150M

STPS1150M electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers 1.0 Amp 150 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6561 ea
Line Total: USD 1.66

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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STPS1150M
STMicroelectronics

1 : USD 1.6561
10 : USD 0.789
100 : USD 0.4285
500 : USD 0.3366
1000 : USD 0.2607
2500 : USD 0.2372
5000 : USD 0.2222

     
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RoHS - XON
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Mounting Style
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Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
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Cnhts
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STPS1150 Datasheet 150 V, 1 A power Schottky rectifier Features Negligible switching losses Low forward voltage drop for higher efficiency and extended battery life Low thermal resistance Surface mount miniature package Avalanche capability ECOPACK2 compliant component Applications Switching diode SMPS DC/DC converter Telecom power Description This 150 V power Schottky rectifier is ideal for switch mode power supplies on up to 24 V rails and high frequency converters. Packaged in SMA, SMA Flat Notch and axial, the STPS1150 is optimized for use in consumer and computer applications where low drop forward voltage is required to reduce power dissipation. Product status STPS1150 Product summary Symbol Values I F(AV) 1 A V 150 V RRM T 175 C j (max.) V 0.62 V F(typ.) DS3281 - Rev 8 - September 2019 www.st.com For further information contact your local STMicroelectronics sales office.STPS1150 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 150 V RRM I Forward rms current 15 A F(RMS) T = 150 C SMA L Average forward current = I T = 160 C SMA Flat Notch 1 A F(AV) L 0.5, square wave DO-41 T = 150 C L SMA 50 Surge non repetitive forward I t = 10 ms sinusoidal FSM SMA Flat Notch p 50 A current DO-41 75 Repetitive peak avalanche P t = 10 s, T = 125 C 108 W ARM p j power T Storage temperature range -65 to + 175 C stg (1) T + 175 C j Maximum operating junction temperature 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameter Symbol Parameter Max. value Unit SMA 30 Junction to lead R SMA Flat Notch 20 C/W th(j-l) Junction to lead Lead length = 10 mm DO-41 30 For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 0.2 1.0 A j Reverse leakage (1) I V = V R R RRM current T = 125 C - 0.2 1.0 mA j T = 25 C - 0.78 0.82 j I = 1 A F T = 125 C - 0.62 0.67 j Forward voltage (2) V V F drop T = 25 C j - 0.85 0.89 I = 2 A F T = 125 C - 0.69 0.75 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p 2 To evaluate the conduction losses use the following equation: P = 0.59 x I + 0.08 I F(AV) F (RMS) DS3281 - Rev 8 page 2/13

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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