Product Information

STPS1545CG-TR

STPS1545CG-TR electronic component of STMicroelectronics

Datasheet
STMicroelectronics Schottky Diodes & Rectifiers 2X7.5 Amp 45 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3239 ea
Line Total: USD 1.32

78 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
66 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STPS1545CG-TR
STMicroelectronics

1 : USD 1.3239
10 : USD 1.1365
30 : USD 1.0338
100 : USD 0.9195
500 : USD 0.8682
1000 : USD 0.8445

     
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RoHS - XON
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Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
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Height
Length
Operating Temperature Range
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Cnhts
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STPS1545C Power Schottky rectifier Datasheet - production data Description A1 K Dual center tap Schottky rectifier suited for switch A2 mode power supply and high frequency DC to K DC converters. K 2 Packaged either in TO-220AB and D PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. A2 K A2 A1 Table 1: Device summary K A1 2 Symbol Value I PAK TO-220AB I 2 x 7.5 A F(AV) K K VRRM 45 V T (max) 175 C j VF (typ) 0.5 V A2 A2 A1 A1 2 D PAK Features Very small conduction losses Negligibile switching losses Extremely fast switching Avalanche capability specified ECOPACK 2 compliant component for DPAK on demand February 2016 DocID3503 Rev 8 1/13 www.st.com This is information on a product in full production. Characteristics STPS1545C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V I Forward rms current 20 A F(RMS) Average forward current I T = 157 C Per diode 7.5 A F(AV) C = 0.5, square wave Surge non repetitive IFSM tp = 10 ms sinusoidal 150 A forward current Repetitive peak P t = 10 s, T = 125 C 190 W ARM p j avalanche power T Storage temperature range -65 to + 175 C stg (1) Tj Maximum operating junction temperature + 175 C Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Symbol Parameter Value Unit Per diode 3.0 R Junction to case C/W th(j-c) Total 1.7 R Coupling - 0.35 C/W th(c) When the diodes 1 and 2 are used simultaneously: Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 100 A (1) I Reverse leakage current V = V R R RRM T = 125 C - 5 15 mA j Tj = 125 C IF = 7.5 A - 0.5 0.57 (1) VF Forward voltage drop T = 25 C I = 15 A - - 0.84 V j F Tj = 125 C IF = 15 A - 0.65 0.72 Notes: (1) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.42 x I + 0.020 I F(AV) F (RMS) 2/13 DocID3503 Rev 8

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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