Product Information

STPS10L25G-TR

STPS10L25G-TR electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers LOW DROP POWER SCHOTTKY RECTIFIER
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.2951 ea
Line Total: USD 295.1

970 - Global Stock
Ships to you between
Tue. 28 May to Mon. 03 Jun
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
970 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 16
Multiples : 1

Stock Image

STPS10L25G-TR
STMicroelectronics

16 : USD 0.5762
100 : USD 0.5647

970 - WHS 2


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1000
Multiples : 1000

Stock Image

STPS10L25G-TR
STMicroelectronics

1000 : USD 0.2951
2000 : USD 0.2892

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
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Additional Infomation About Product

STPS10L25 Low drop power Schottky rectifier Datasheet - production data Description K A Single Schottky rectifier suited to switched mode power supplies and high frequency DC to DC K K converters. K This device is especially intended for use as a rectifier at the secondary of 3.3 V SMPS units. Table 1: Device summary A A K A Symbol Value NC NC IF(AV) 10 A TO-220AC DPAK VRRM 25 V V (typ.) 0.30 V F Tj (max.) 150 C Features Very low forward voltage drop for less power dissipation Optimized conduction / reverse losses trade- off which means the highest efficiency in the applications Avalanche capability specified ECOPACK 2 compliant component for DPAK on demand October 2016 DocID3619 Rev 5 1/12 www.st.com This is information on a product in full production. Characteristics STPS10L25 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 25 V I Forward rms current 30 A F(RMS) Average forward current I T = 140 C 10 A F(AV) C = 0.5 square wave I Surge non repetitive forward current t = 10 ms sinusoidal 200 A FSM p PARM Repetitive peak avalanche power tp = 10 s, Tj = 125 C 395 W T Storage temperature range -65 to +150 stg C (1) Tj Maximum operating junction temperature 150 Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Max .value Unit Rth(j-c) Junction to case 1.5 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 800 A (1) I Reverse leakage current V = V R R RRM T = 125 C - 135 260 mA j Tj = 25 C - 0.46 I = 10 A F T = 125 C - 0.30 0.35 j (1) VF Forward voltage drop V Tj = 25 C - 0.55 I = 20 A F T = 125 C - 0.41 0.48 j Notes: (1) Pulse test: t = 380 s, < 2% p To evaluate the maximum conduction losses, use the following equation: 2 P = 0.22 x IF(AV) + 0.013 x IF (RMS) 2/12 DocID3619 Rev 5

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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