STPS1L30M STMicroelectronics

STPS1L30M electronic component of STMicroelectronics
STPS1L30M STMicroelectronics
STPS1L30M Schottky Diodes & Rectifiers
STPS1L30M  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STPS1L30M Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS1L30M Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. STPS1L30M
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 1.0 Amp 30 Volt
Datasheet: STPS1L30M Datasheet (PDF)
Price (USD)
2007: USD 0.1296 ea
Line Total: USD 260.11 
Availability : 2425
  
Ship by Wed. 13 Aug to Tue. 19 Aug
QtyUnit Price
2007$ 0.1296
2073$ 0.1254
2500$ 0.1217

Availability 2425
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 2007
Multiples : 1
QtyUnit Price
2007$ 0.1296
2073$ 0.1254
2500$ 0.1217

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS1L30M from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS1L30M and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS1L30M LOW DROP POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics I 1 A F(AV) V 30 V RRM A T (max) 150C j V (max) C 0.38 V F FEATURES AND BENEFITS STmite (DO216-AA) Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop for higher efficiency and extented battery life Low thermal resistance Table 2: Order Code Avalanche capability specified Part Number Marking STPS1L30M 1L3 DESCRIPTION Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in STmite, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the small size of the package this device fits battery powered equipment (cellular, notebook, PDAs, printers) as well chargers and PCMCIA cards. Table 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I RMS forward voltage 2 A F(RMS) I T = 140C = 0.5 Average forward current 1A F(AV) c I Surge non repetitive forward current 10 ms sinusoidal 50 A FSM P Repetitive peak avalanche power tp = 1s Tj = 25C 1200 W ARM T Storage temperature range -65 to + 150 C stg T Maximum operating junction temperature * 150 C j Critical rate of rise of reverse voltage (rated V , T = 25C) dV/dt 10000 V/s R j dPtot 1 * : --------------- > -------------------------- thermal runaway condition for a diode on its own heatsink dTj Rth()j a September 2004 REV. 3 1/6STPS1L30M Table 4: Thermal Resistance Symbol Parameter Value Unit R * Junction to case 20 C/W th(j-c) R * Junction to ambient C/W 250 th(j-l) * Mounted with minimum recommended pad size, PC board FR4. Table 5: Static Electrical Characteristics Symbol Parameter Tests conditions Min. Typ Max. Unit T = 25C 0.13 0.39 j V = V R RRM T = 85C 5.25 16.5 j T = 25C V = 20V 0.05 0.24 j R I * Reverse leakage current mA R T = 85C 3.5 10.5 j T = 25C V = 10V 0.03 0.15 j R T = 85C 2.4 7 j T = 25C 0.33 0.39 j I = 1A F T = 85C 0.28 0.34 j V * Forward voltage drop V F T = 25C 0.45 0.53 j I = 3A F T = 85C 0.43 0.51 j Pulse test: * tp = 380 s, < 2% 2 To evaluate the conduction losses use the following equation: P = 0.34 x I + 0.07 I F(AV) F (RMS) Figure 1: Conduction losses versus average Figure 2: Average forward current versus current ambient temperature ( = 0.5) I (A) P (W) F(AV) F(AV) 1.1 0.50 R=th(j-a)Rth(j-c) = 0.1 = 0.2 = 0.5 = 0.05 1.0 0.45 0.9 0.40 = 1 0.8 0.35 0.7 0.30 Rth(j-a)=270C/W 0.6 0.25 0.5 0.20 0.4 0.15 0.3 T 0.10 0.2 0.05 0.1 I (A) F(AV) T (C) amb tp =tp/T 0.00 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 25 50 75 100 125 150 2/6

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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