STPS20SM60C Power Schottky rectifier Features A1 K High current capability A2 Avalanche rated K K Low forward voltage drop High frequency operation A2 A2 K Description A1 A1 2 2 D PAK I PAK The STPS20SM60C is a dual diode Schottky STPS20SM60CG-TR STPS20SM60CR rectifier, suited for high frequency switch mode K power supply. 2 Packaged in TO-220AB, TO-220FPAB, I PAK and 2 D PAK, this device is intended to be used in A1 A2 notebook, game station and desktop adapters, K K A2 providing in these aplications a good efficiency at A1 both low and high load. TO-220AB TO-220FPAB STPS20SM60CT STPS20SM60CFP Table 1. Device summary Symbol Value (a) Figure 1. Electrical characteristics I 2 x 10 A F(AV) V 60 V RRM I V V (typ) 0.420 VForwar F I 2 x I T (max) 150 C O X j IF I O X VRRM V V AR R V I R V V V V To F(Io) F F(2xIo)Revers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 14. V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics October 2011 Doc ID 022015 Rev 1 1/11 www.st.com 11Characteristics STPS20SM60C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, at T = 25 C unless amb otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 30 A F(RMS) TO-220AB, T = 135 C Per diode 10 c 2 2 I PAK, D PAK T = 130 C Per device 20 c Average forward current, I A F(AV) = 0.5 T = 110 C Per diode 10 c TO-220FPAB T = 90 C Per device 20 c Surge non repetitive I t = 10 ms sine-wave 220 A FSM p forward current (1) P Repetitive peak avalanche power T = 25 C, t = 1 s 8700 W ARM j p Maximum repetitive peak (2) V t < 1 s, T < 150 C, I < 32.6 A 80 V ARM p j AR avalanche voltage Maximum single pulse (2) V t < 1 s, T < 150 C, I < 32.6 A 80 V ASM p j AR peak avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 150 C j 1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 14 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit per diode 2.00 TO-220AB 2 2 I PAK, D PAK total 1.13 R Junction to case C/W th(j-c) per diode 4.90 TO-220FPAB total 4.05 2 2 TO-220AB, I PAK, D PAK 0.25 R Coupling C/W th(c) TO-220FPAB 3.20 When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) 2/11 Doc ID 022015 Rev 1