Product Information

STPS5H100AF

STPS5H100AF electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers High voltage power Schottky rectifier

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

32: USD 0.3386 ea
Line Total: USD 10.84

776 - Global Stock
Ships to you between
Thu. 09 May to Wed. 15 May
MOQ: 32  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 3000
Multiples : 3000

Stock Image

STPS5H100AF
STMicroelectronics

3000 : USD 0.2083

776 - WHS 2


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 32
Multiples : 1

Stock Image

STPS5H100AF
STMicroelectronics

32 : USD 0.3386
50 : USD 0.2916
100 : USD 0.2042
250 : USD 0.2002

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Factory Pack Quantity :
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
LoadingGif

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STPS5H100AF High voltage power Schottky rectifier Datasheet - production data Description K A This high voltage Schottky barrier rectifier device is packaged in SOD128Flat and designed for high frequency miniature switched mode power supplies and for board DC to DC converters. Table 1: Device summary Symbol Value IF(AV) 5 A V 100 V RRM SOD128Flat Tj(max.) 175 C V (typ.) 0.51 V F Features Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current and forward voltage drop Avalanche specification ECOPACK compliant component January 2017 DocID029499 Rev 1 1/8 www.st.com This is information on a product in full production. Characteristics STPS5H100AF 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(AV) Average forward current TL = 115 C, = 0.5, square pulse 5 A tp = 10 ms sinusoidal 125 Surge non repetitive forward IFSM A current t = 8.3 ms sinusoidal 130 p Repetitive peak avalanche P t = 10 s, T = 125 C 165 W ARM p j power T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature 175 C j Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Symbol Parameter Max. value Unit Rth(j-l) Junction to lead 16 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 0.7 3.5 A j (1) I R Reverse leakage current Tj = 125 C VR = 100 V - 1 4 mA T = 150 C - 16 j Tj = 25 C - 0.67 I = 2.5 A F T = 125 C - 0.51 0.55 j (2) VF Forward voltage drop V Tj = 25 C - 0.76 I = 5 A F T = 125 C - 0.57 0.61 j Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.49 x IF(AV) + 0.024 x IF (RMS) For more information, please refer to the following application notes related to the power losses. AN604 (Calculation of conduction losses in a power rectifier) AN4021 (Calculation of reverse losses in a power diode) 2/8 DocID029499 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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