STPS5L25B-TR STMicroelectronics

STPS5L25 Low drop power Schottky rectifier Datasheet production data Description Single Schottky rectifier suited for switch mode power supply and high frequency DC to DC . converters. Packaged in DPAK, this device is intended for use as a rectifier at the secondary of 3.3 V SMPS units . Table 1. Device summary 1& 1& Symbol Value . 3 I 5 A F(AV) V 25 V RRM T 150 C j (max) V 0.31 V F(typ) Features Very low forward voltage drop for less power dissipation and reduced heatsink Optimized conduction/reverse losses trade-off which means the highest efficiency in the applications High power surface mount miniature package Avalanche specification ECOPACK 2 compliant component for DPAK on demand May 2017 DocID3626 Rev 8 1/8 This is information on a product in full production. www.st.com 8Characteristics STPS5L25 1 Characteristics Table 2. Absolute ratings (limiting values, at 25 C unless otherwise stated) Symbol Parameter Value Unit V Repetitive peak reverse voltage 25 V RRM I Forward rms current 7 A F(RMS) I Average forward current, 0.5 square wave T = 140 C, 5 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 75 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 215 W ARM p j T Storage temperature range -65 to +150 C stg (1) T Maximum operating junction temperature 150 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Max. value Unit R Junction to case 2.5 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -- 350 A j (1) I Reverse leakage current V = V R R RRM T = 125 C - 55 115 mA j T = 25 C -- 0.47 j I = 5 A F T = 125 C - 0.31 0.35 j (1) V Forward voltage drop V F T = 25 C -- 0.59 j I = 10 A F T = 125 C - 0.41 0.50 j 1. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.2 x I + 0.03 x I F(AV) F (RMS) 2/8 DocID3626 Rev 8