STPS640CB STMicroelectronics

STPS640CB electronic component of STMicroelectronics
STPS640CB STMicroelectronics
STPS640CB Schottky Diodes & Rectifiers
STPS640CB  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of STPS640CB Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS640CB Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. STPS640CB
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 2X3 Amp 40 Volt
Datasheet: STPS640CB Datasheet (PDF)
Price (USD)
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Obsolete

Availability 0
MOQ : 606
Multiples : 1
QtyUnit Price
606$ 0.4292
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Obsolete

Availability 0
MOQ : 25
Multiples : 25
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25$ 0.5722
300$ 0.5174
1250$ 0.4626
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Obsolete

Availability 0
MOQ : 1
Multiples : 6000
QtyUnit Price
1$ 35.2646
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Obsolete

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MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.7015
9000$ 0.6918
24000$ 0.6701
45000$ 0.6484
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Obsolete

Availability 0
MOQ : 598
Multiples : 1
QtyUnit Price
598$ 0.4351
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Obsolete

Availability 0
MOQ : 18
Multiples : 1
QtyUnit Price
18$ 0.4302
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Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Series
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Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS640CB from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS640CB and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS640C Power Schottky rectifier Datasheet - production data A1 Description K This dual Schottky rectifier is designed for switch A2 mode power supplies and other power converters. K This device is intended for use in low and K medium voltage operation, and in particular high frequency circuits where low switching losses are required (free wheeling and polarity protection). A2 A2 Table 1: Device summary A1 A1 Symbol Value IF(AV) 2 x 3 A DPAK VRRM 40 V Tj (max) 150 C Features V (typ) 0.50 V F Very small conduction losses Extremely fast switching Low thermal resistance Negligible switching losses Low forward voltage drop Low capacitance Avalanche specification ECOPACK 2 compliant component for DPAK on demand May 2017 DocID3628 Rev 9 1/8 www.st.com This is information on a product in full production. Characteristics STPS640C 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, per diode, unless otherwise specified) Uni Symbol Parameter Value t VRRM Repetitive peak reverse voltage 40 V I Forward rms current 6 A F(RMS) IF(AV) Average forward current = 0.5, square wave TC = 135 C 3 A I Surge non repetitive forward current tp = 10 ms sinusoidal 75 A FSM tp = 10 s P Repetitive peak avalanche power 90 W ARM Tj = 125 C T Storage temperature range -65 to +150 C stg (1) Tj Maximum operating junction temperature 150 C Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Max. value Unit Per diode 5.5 R Junction to case th(j-c) Per device 3 C/W Rth(c) Coupling 0.5 When the diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j (diode1) (diode1) th(j-c) (diode2) th(c) Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 100 A j (1) IR Reverse leakage current VR = VRRM Tj = 125 C - 2 10 mA T = 25 C - 0.63 j IF = 3 A Tj = 125 C - 0.50 0.57 (2) V Forward voltage drop V F T = 25 C - 0.84 j IF = 6 A Tj = 125 C - 0.67 0.72 Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.42 x IF(AV) + 0.050 x IF (RMS) 2/8 DocID3628 Rev 9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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