STPSC20H12 Datasheet 1200 V power Schottky silicon carbide diode Features A K No or negligible reverse recovery K Switching behavior independent of temperature K Robust high voltage periphery Operating from -40 C to 175 C Low V F A ECOPACK compliant component A NC K K DPAK TO-220AC Description The SiC diode, available in TO-220AC, DPAK and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low V Schottky diode F A structure with a 1200 V rating. DO-247 LL K Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. Product status link STPSC20H12 Product summary Symbol Value I 20 A F(AV) V 1200 V RRM T 175 C j(max.) V 1.35 V F(max.) DS11651 - Rev 5 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPSC20H12 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40 C to +175 C) 1200 V RRM j I Forward rms current 38 A F(RMS) (1) TO-220AC, DPAK, T = 155 C , DC current C I Average forward current 20 A F(AV) DO-247 LL, Tc = 150 C ,DC current TO-220AC, DPAK, T = 155 C, T = 175 C, = 0.1 78 C j I Repetitive peak forward current A FRM DO-247 LL, T = 150 C, T = 175 C, = 0.1 79 C j T = 25 C 140 C t = 10 ms sinusoidal p I T = 150 C 120 Surge non repetitive forward current A FSM C t = 10 s square T = 25 C 700 p C T Storage temperature range -65 to +175 C stg T Operating temperature range -40 to +175 C j 1. Value based on Rth(j-c) max. Table 2. Thermal parameters Symbol Parameter Typ. value Max. value Unit TO-220AC, DPAK 0.30 0.45 R Junction to case C/W th(j-c) DO-247 LL 0.40 0.55 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 10 120 j (1) V = V I Reverse leakage current A R R RRM T = 150 C - 60 800 j T = 25 C - 1.35 1.50 j (2) I = 20 A V Forward voltage drop V F F T = 150 C - 1.75 2.25 j 1. Pulse test: t = 10 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.07 x I + 0.059 x I F(AV) F (RMS) DS11651 - Rev 5 page 2/15