STPSC806 600 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature A K Particularly suitable in PFC boost diode function TO-220AC Description STPSC806D The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon K carbide substrate. The wide band gap material allows the design of a Schottky diode structure A with a 600 V rating. Due to the Schottky NC construction no recovery is shown at turn-off and 2 D PAK ringing patterns are negligible. The minimal STPSC806G capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC Table 1. Device summary operations in hard switching conditions. I 8 A F(AV) V 600 V RRM T 175 C j (max) Q 10 nC C (typ) November 2010 Doc ID 16286 Rev 3 1/8 www.st.com 8Characteristics STPSC806 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 18 A F(RMS) I Average forward current T = 115 C, = 0.5 8 A F(AV) c t = 10 ms sinusoidal, T = 25 C 30 p c Surge non repetitive forward I t = 10 ms sinusoidal, T = 125 C 24 A FSM p c current t = 10 s square, T = 25 C 120 p c I Repetitive peak forward current T = 115 C, T = 150 C, = 0.1, 30 A FRM c j T Storage temperature range -55 to +175 C stg T Operating junction temperature -40 to +175 C j Table 3. Thermal resistance Symbol Parameter Maximum value Unit R Junction to case 2.4 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -20 100 j Reverse leakage (1) I V = V A R R RRM current T = 150 C - 150 1000 j T = 25 C -1.4 1.7 j (2) V Forward voltage drop I = 8 A V F F T = 150 C - 1.6 2.1 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.2 x I + 0.113 x I F(AV) F (RMS) Table 5. Other parameters Symbol Parameter Test conditions Typ. Unit V = 400 V, I = 8 A dI /dt = -200 A/s r F F Q Total capacitive charge 10 nC c T = 150 C j V = 0 V, T = 25 C, F = 1 Mhz 450 r c C Total capacitance pF V = 400 V, T = 25 C, F = 1 Mhz 35 r c 2/8 Doc ID 16286 Rev 3