TS4448 RZ

TS4448 RZ 150mW High Speed SMD Switching Diode Small Signal Diode 0603 A D B C Features BV Designed for mounting on small surface. Extremely thin/leadless package High mounting capability,strong surage with stand, high reliability. Pb free version and RoHS compliant Green compound (Halogen free) with suffix on E packing code and prefix on date code Unit (mm) Unit (inch) Dimensions Min Max Min Max Mechanical Data Case :0603 standard package, molded plastic A 1.60 1.80 0.063 0.071 B 0.80 1.00 0.031 0.039 Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed C 0.70 0.85 0.027 0.033 High temperature soldering guaranteed: 260C/10s D Typ. 0.45 Typ. 0.018 Polarity : Indicated by cathode band E Typ. 0.70 Typ. 0.028 Weight : 0.003 gram (approximately) Ordering Information Part No. Packing Package TS4448 RZ 4Kpcs / 7 Reel 0603 Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Power Dissipation PD 150 mW Repetitive Peak Reverse Voltage VRRM 100 V Repetitive Peak Forward Current IFRM 300 mA Mean Forward Current IO 125 mA Non-Repetitive Peak Forward Surge Current Pulse Width= IFSM 2.0 A 1 sec Pulse Width= 8.3 msec 1.0 Thermal Resistance (Junction to Ambient) (Note 1) RJA 666 C/W Junction and Storage Temperature Range TJ, TSTG -40 to + 125 C Electrical Characteristics Type Number Symbol Min Max Units V(BR) - 80 V Reverse Breakdown Voltage (Note 2) IF= 5mA 0.72 Forward Voltage VF 0.62 V IF= 100mA 1.00 - 25 VR= 20V Reverse Leakage Current IR nA VR= 80V - 100 CJ - 9.0 pF Junction Capacitance VR=0.5, f=1.0MHz Reverse Recovery Time (Note3) Trr - 9 ns Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : IR=100A Notes:3. Test Condition : IF=IR=10mA, RL=100, IRR=1mA Version : C09 TS4448 RZ 150mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Reverse Current vs Reverse FIG 1 Typical Forward Characteristics 1000 100.00 100 10.00 Ta=25C 10 1.00 1 0.10 0.1 0.01 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 20 40 60 80 100 120 140 Forward Voltage (V) Reverse Voltage (V) FIG 3 Admissible Power Disspation Curve FIG 4 Typical Junction Capacitance 200 7.2 FIG 4 Admissible Power Disspation Curve 175 6.0 150 125 4.8 100 3.6 75 2.4 50 1.2 25 0 0 0 25 50 75 100 125 150 175 024 68 10 Reverse Voltage (V) Ambient Tempeture (C) FIG 5 Forward Resistance vs. Forward Current 10000 1000 100 10 1 0.0 0.1 1.0 10.0 100.0 Version : C09 Power Dissipation (mW) Forward Resistance ( ) Forward Current (mA) Junction Capacitance (pF) Reverse Current (uA)