STR2P3LLH6 STMicroelectronics

STR2P3LLH6 Datasheet P-channel -30 V, 48 m typ., -2 A STripFET H6 Power MOSFET in a SOT23 package Features 3 V R max. I Order code DS DS(on) D STR2P3LLH6 -30 V 56 m -2 A 2 Very low on-resistance 1 Very low gate charge High avalanche ruggedness SOT-23 Low gate drive power loss D (3) Applications Switching applications Description G (1) This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all packages. DS(on) S (2) PG1D3S2 Product status STR2P3LLH6 Product summary Order code STR2P3LLH6 Marking 2K3L Package SOT-23 Packing Tape and reel DS9647 - Rev 5 - March 2019 www.st.com For further information contact your local STMicroelectronics sales office.STR2P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage -30 V DS V Gate-source voltage 20 V GS I Drain current (continuous) at T = 25 C -2 A D pcb I Drain current (continuous) at T = 100 C -1.2 A D pcb (1) I Drain current (pulsed) -8 A DM P Total dissipation at T = 25 C 0.35 W TOT pcb T Operating junction temperature range C J -55 to 150 T Storage temperature range C stg 1. Pulse width limited by safe operating area Table 2. Thermal resistance Symbol Parameter Value Unit (1) R Thermal resistance junction-pcb, single operation 357 C/W thj-pcb 1. When mounted on FR-4 board of 1inch, 2oz Cu, t < 10 s DS9647 - Rev 5 page 2/12