STS10P4LLF6 Datasheet Pchannel -40 V, 12.5 m typ., -10 A STripFET F6 Power MOSFET in SO 8 package 5 Features 8 V R max. I Order code DS DS(on) D STS10P4LLF6 -40 V 15 m -10 A 4 1 Very low on-resistance Very low gate charge SO-8 High avalanche ruggedness Low gate drive power loss D(5, 6, 7, 8) Applications Switching applications G(4) Description This device is a P-channel Power MOSFET developed using the STripFET F6 S(1, 2, 3) technology, with a new trench gate structure. The resulting Power MOSFET exhibits AM01475v4 very low R in all packages. DS(on) Product status link STS10P4LLF6 Product summary Order code STS10P4LLF6 Marking 10P4L Package SO-8 Packing Tape and reel DS10121 - Rev 5 - January 2021 www.st.com For further information contact your local STMicroelectronics sales office.STS10P4LLF6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage -40 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C -10 A amb I D Drain current (continuous) at T = 100 C -5.6 A amb (1) I Drain current (pulsed) -40 A DM P Total power dissipation at T = 25 C 2.7 W TOT amb T Storage temperature -55 to 150 C stg T Operating junction temperature 150 C J 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance, junction-to-ambient 47 C/W thJA 1. When mounted on 1 inch FR-4 board, 2 oz. Cu., t 10 sec. DS10121 - Rev 5 page 2/13