Product Information

STTH100W04CW

STTH100W04CW electronic component of STMicroelectronics

Datasheet
Rectifiers Turbo 2 ultrafast 2X50A 400V 0.98VF

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.5004 ea
Line Total: USD 7.5

6 - Global Stock
Ships to you between
Tue. 04 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1

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STTH100W04CW
STMicroelectronics

1 : USD 7.525
10 : USD 6.7273
30 : USD 6.2397
90 : USD 5.8309

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Series
Packaging
Product
Brand
Operating Temperature Range
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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STTH100W04C Turbo 2 ultrafast high voltage rectifier Datasheet production data Features A2A2 Ultrafast switching KK A1A1 Low reverse recovery current Low thermal resistance Reduces switching losses ECOPACK 2 compliant component Ribbon bonding for more robustness A2 K A1 Description TO-247 The STTH100W04CW, uses ST Turbo 2, 400 V STTH100W04CW technology. It is especially suited to be used for DC/DC and DC/AC converters in secondary stage of MIG/MMA/TIG welding machine. Housed in Table 1. Device summary ST s TO-247, this device offers high power integration for all welding machines and industrial Symbol Value applications. I 2 x 50 A F(AV) V 400 V RRM t (typ) 35 ns rr T (max) 175 C j V (typ) 0.98 V F October 2012 Doc ID 023617 Rev 1 1/8 This is information on a product in full production. www.st.com 8Characteristics STTH100W04C 1 Characteristics Table 2. Absolute ratings (limiting values, at 25 C, unless otherwise specified, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 400 V RRM I Forward rms current 75 A F(RMS) T = 120 C Per diode 50 c I Average forward current, = 0.5 A F(AV) T = 110C Per device 100 c I Surge non repetitive forward current t = 10 ms sinusoidal 350 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature + 175 C j Table 3. Thermal resistance Symbol Parameter Value Unit Per diode 0.7 R Junction to case C / W th(j-c) Total 0.4 R Coupling 0.1 C / W th(c) When diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (per diode) + P(diode 2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 25 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 25 250 j T = 25 C 1.45 j I = 50A F T = 150 C 0.98 1.20 j (2) V Forward voltage drop V F T = 25 C 1.75 j I = 100 A F T = 150 C 1.25 1.55 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.85 x I + 0.007 I F(AV) F (RMS) 2/8 Doc ID 023617 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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