Product Information

STTH50W06SW

STTH50W06SW electronic component of STMicroelectronics

Datasheet
Rectifiers Turbo 2 ultrafast 50A 600V 34ns 1.25VF

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

STTH50W06SW
STMicroelectronics

1 : USD 4.0612
10 : USD 3.4463
100 : USD 2.9959
250 : USD 2.8457
500 : USD 2.5454
1000 : USD 2.3795
2500 : USD 2.3795
5000 : USD 2.3452
10000 : USD 2.2079
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Series
Packaging
Product
Brand
Operating Temperature Range
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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STTH50W06S Turbo 2 ultrafast high voltage rectifier Datasheet production data Features A K Ultrafast switching A Low reverse recovery current Low thermal resistance Reduces switching losses ECOPACK 2 compliant component A Ribbon bonding for more robustness K A Description TO-247 The STTH50W06SW, uses ST Turbo 2, 600 V STTH50W06SW technology. It is especially suited to be used for PFC stage used in MIG/MMA/TIG welding machine. Housed in ST s TO-247, this device Table 1. Device summary offers high power integration for all welding machines and industrial equipment. Symbol Value I 50 A F(AV) V 600 V RRM t (typ) 34 ns rr T (max) 175 C j V (typ) 1.25 V F October 2012 Doc ID 023618 Rev 1 1/7 This is information on a product in full production. www.st.com 7Characteristics STTH50W06S 1 Characteristics Table 2. Absolute ratings (limiting values, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 75 A F(RMS) I Average forward current, = 0.5 T = 100 C 50 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 390 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature + 175 C j Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 0.7 C / W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 50 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 50 500 j T = 25 C 2.4 j (2) V Forward voltage drop I = 50 A V F F T = 150 C 1.25 1.6 j 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 1.1 x I + 0.01 I F(AV) F (RMS) Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I Reverse recovery current 14 19 A RM I = 50 A, V = 400 V F R Q Reverse recovery charge T = 125 C 850 nC RR j dI /dt = -200 A/s F S Softness factor 0.3 factor I = 1 A, V = 30 V F R t Reverse recovery time T = 25 C 34 45 ns rr j dI /dt = -100 A/s F t Forward recovery time T = 25 C I = 50 A, 200 ns fr j F V = 1.8 V FR V Forward recovery voltage T = 25 C 2.8 4 V FP j dI /dt = 400 A/s F 2/7 Doc ID 023618 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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