Product Information

STTH102AY

STTH102AY electronic component of STMicroelectronics

Datasheet
Rectifiers Auto Hi efficiency 1A 200V 0.78VF 20ns
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5559 ea
Line Total: USD 0.56

72 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
72 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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STTH102AY
STMicroelectronics

1 : USD 0.5559
10 : USD 0.4593
30 : USD 0.4169
100 : USD 0.3646
500 : USD 0.3425
1000 : USD 0.3283

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Product
Brand
Maximum Reverse Leakage Current
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

STTH102-Y Automotive high efficiency ultrafast diode Features Very low conduction losses Negligible switching losses A Low forward and reverse recovery times High junction temperature K ECOPACK 2 compliant component AEC-Q101 qualified SMA (JEDEC DO-214AC) Description STTH102AY The STTH102-Y, which is using STs new 200 V planar technology, is specially suited for switching Table 1. Device summary mode base drive and transistor circuits. The device is also intended for use as a free wheeling Symbol Value diode in power supplies and other power I 1 A switching applications for automotive. F(AV) V 200 V RRM T (max) 175 C j V (max) 0.78 V F t (max) 20 ns rr November 2011 Doc ID 17982 Rev 1 1/7 www.st.com 7Characteristics STTH102-Y 1 Characteristics Table 2. Absolute rating (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I Average forward current T = 148 C = 0.5 1 A F(AV) L I Surge non repetitive forward current t = 10 ms sinusoidal 40 A FSM p T Storage temperature range -65 to + 175 C stg T Operating junction temperature range -40 to +175 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to lead 30 C/W th(j-l) Table 4. Static Electrical Characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C 1 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 1 25 j I = 700 mA 0.90 F T = 25 C j (2) V Forward voltage drop I = 1 A 0.97 V F F T = 125 C I = 1 A 0.68 0.78 j F 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p 2 To evaluate the conduction losses use the following equation: P = 0.65 x I + 0.130 I F(AV) F (RMS) Table 5. Dynamic electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit I = 0.5 A I = 0.25 A F rr t Reverse recovery time T = 25 C 12 20 ns rr j I = 1 A R I = 1 A dI /dt = 50 A/ms F F t Forward recovery time T = 25 C 50 ns fr j V = 1.1 x V max FR F Forward recovery V T = 25 C I = 1 A dI /dt = 50 A/ms 1.8 V FP j F F voltage 2/7 Doc ID 17982 Rev 1

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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