Product Information

STTH10R04D

STTH10R04D electronic component of STMicroelectronics

Datasheet
Rectifiers High Effecientcy Rectifier

Manufacturer: STMicroelectronics
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Price (USD)

1: USD 3.2973 ea
Line Total: USD 3.3

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

STTH10R04D
STMicroelectronics

1 : USD 1.9058
10 : USD 1.6345
100 : USD 1.2745

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
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STTH10R04 High efficiency rectifier Datasheet - production data Description The device is an ultrafast recovery power rectifier A K dedicated to energy recovery in PDP application. It is especially designed for clamping function in energy recovery block. K K The compromise between forward voltage drop and recovery time offers optimized performance. Table 1: Device summary A A Symbol Value NC NC 2 IF(peak) 10 A D PAK V 400 V RRM Tj (max) 175 C Features V (typ) 1.15 V F Ultrafast recovery trr (typ.) 15 ns Low power losses High surge capability Low leakage current High junction temperature ECOPACK 2 compliant component for DPAK on demand August 2017 DocID13971 Rev 2 1/11 www.st.com This is information on a product in full production. Characteristics STTH10R04 1 Characteristics Table 2: Absolute ratings (limiting values, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V I Forward rms current 20 A F(RMS) TC = 135 C I Peak working forward current 10 A F(peak) = 0.5 square wave I Surge non repetitive forward current tp = 10 ms sinusoidal 100 A FSM Tstg Storage temperature range -65 to +175 C T Maximum operating junction temperature 175 C j Table 3: Thermal parameter Symbol Parameter Max. value Unit R Junction to case 3.5 C/W th(j-c) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 10 j (1) IR Reverse leakage current V = V A R RRM Tj = 125 C - 10 100 T = 25 C - 1.50 1.70 j (2) VF Forward voltage drop I = 10 A V F Tj = 125 C - 1.15 1.35 Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses, use the following equation: 2 P = 1.05 x IF(AV) + 0.03 x IF (RMS) 2/11 DocID13971 Rev 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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