Product Information

STTH110UFY

STTH110UFY electronic component of STMicroelectronics

Datasheet
Rectifiers Automotive high voltage ultrafast rectifiers

Manufacturer: STMicroelectronics
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Price (USD)

1: USD 0.5868 ea
Line Total: USD 0.59

4720 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4526 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STTH110UFY
STMicroelectronics

1 : USD 0.5868
10 : USD 0.4806
30 : USD 0.4274
100 : USD 0.3762
500 : USD 0.3447
1000 : USD 0.327

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Product
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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STTH110-Y Automotive high voltage ultrafast rectifier Datasheet - production data Description The STTH110-Y, which is using STs new 1000 V K A planar technology, is especially suited for switching mode base drive and transistor circuits. A The device is also intended for use as a free- wheeling diode in power supplies and other power switching applications in automotive K functions. Table 1. Device summary SMBflat STTH110UFY Symbol Value I 1 A F(AV) V 1000 V RRM Features T 175 C j (max) Very low conduction losses V 0.98 V F (typ) Negligible switching losses T 52 ns rr (typ) Low forward and reverse recovery times High junction temperature AEC-Q101 qualified ECOPACK 2 compliant component February 2014 DocID025634 Rev 1 1/7 This is information on a product in full production. www.st.comCharacteristics STTH110-Y 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM I Average forward current T = 140 C = 0.5 1 A F(AV) L I Forward Surge current t = 8.3 ms 20 A FSM p T Storage temperature range -65 to + 175 C stg (1) T Operating temperature range -40 to + 175 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to lead 20 C/W th(j-l) Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C 5 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 1 50 j T = 25 C 1.7 j (2) V Forward voltage drop I = 1 A V F F T = 150 C 0.98 1.42 j 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 1.20 x I + 0.225 I F(AV) F (RMS) Table 5. Dynamic electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit I = 0.5 A F t Reverse recovery time T = 25 C I = 0.25 A 52 75 rr j rr ns I = 1 A R t Forward recovery time 300 fr I = 1 A F T = 25 C dI /dt = 50 A/s Forward recovery j F V 10 15 V FP V = 2.70 V FR voltage 2/7 DocID025634 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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