STTH1202D STMicroelectronics

STTH1202 Ultrafast recovery diode Main product characteristics I 12 A F(AV) V 200 V K RRM A T (max) 175 C j V (typ) 0.82 V F K t (typ) 18 ns rr Features and benefits A A Very low conduction losses K K Negligible switching losses TO-220AC TO-220FPAC Low forward and reverse recovery time STTH1202D STTH1202FP High junction temperature Insulated packages TO-220FPAC Electrical insulation 1500 V RMS A TO-220AC Ins K Electrical insulation 2500 V RMS TO-220AC Ins Description STTH1202DI The STTH1202 uses ST s new 200V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits. Packaged in TO-220AC, TO-220FPAC, and Order codes TO-220AC Ins, this device is intended for use in low voltage, high frequency inverters, free Part Number Marking wheeling and polarity protection. STTH1202D STTH1202 STTH1202FP STTH1202 STTH1202DI STTH1202DI March 2007 Rev 1 1/10 www.st.comCharacteristics STTH1202 1 Characteristics Table 1. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 RRM V V Non repetitive peak reverse voltage 200 RSM I RMS forward current 30 A F(RMS) T = 140 C TO-220AC c I Average forward current, = 0.5 TO-220AC Ins T = 130 C 12 A c F(AV) T = 105 C TO-220FPAC c I Repetitive peak forward current t = 10 s F = 5 kHz square 130 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 100 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal parameters Symbol Parameter Value Unit TO-220AC 2.5 R Junction to case TO-220AC Ins 3 C/W th(j-c) TO-220FPAC 5 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 10 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 10 100 j T = 25 C 1.0 1.10 j I = 12 A F T = 150 C 0.82 0.95 j (2) V Forward voltage drop T = 25 C 1.15 V F j T = 125 C I = 15 A 0.91 1.05 j F T = 150 C 0.87 1.0 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.77 x I + 0.015 x I F(AV) F (RMS) 2/10