STTH12R06FP STMicroelectronics

STTH12R06 Turbo 2 ultrafast high voltage rectifier Features Ultrafast switching Low reverse recovery current K Low thermal resistance Reduces switching losses A A Package insulation voltage: K K TO220AC ins: 2500 V RMS TO-220AC TO-220FPAC TO-220FPAC: 2000 V DC STTH12R06D STTH12R06FP Description K The STTH12R06 uses ST Turbo 2 600V technology and is specially suited as a boost A diode in continuous mode power factor A NC K corrections and hard switching conditions. 2 D PAK TO-220AC insulated This device is also intended for use as a free STTH12R06G STTH12R06DIRG wheeling diode in power supplies and other power switching applications. Table 1. Device summary Symbol Value I 12 A F(AV) V 600 V RRM I (typ) 7 A RM T 175 C j V (typ) 1.4 V F t (max) 25 ns rr February 2010 Doc ID 7973 Rev 4 1/11 www.st.com 11Characteristics STTH12R06 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM 2 TO-220AC / TO-220FPAC / D PAK 30 I Forward rms current A F(RMS) TO-220AC ins. 24 2 TO-220AC / DPAK T = 125 C c I Average forward current = 0.5 TO-220FPAC T = 50 C 12 A F(AV) c TO-220AC ins. T = 80 C c I Surge non repetitive forward current t = 10 ms sinusoidal 100 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal resistance Symbol Parameter Value (max) Unit 2 TO-220AC / DPAK 1.7 R Junction to case TO-220FPAC 4.4 C/W th(j-c) TO-220AC ins. 3.3 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 45 j I Reverse leakage current V = V A R R RRM T = 125 C 50 600 j T = 25 C 2.9 j V Forward voltage drop I = 12 A V F F T = 125 C 1.4 1.8 j To evaluate the conduction losses use the following equation: 2 P = 1.16 x I + 0.053 I F(AV) F (RMS) 2/11 Doc ID 7973 Rev 4