Product Information

STTH12T06DI

STTH12T06DI electronic component of STMicroelectronics

Datasheet
Rectifiers 600V Tandem Diode 7pF 12A If 15ns
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.8226 ea
Line Total: USD 3.82

66 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
66 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STTH12T06DI
STMicroelectronics

1 : USD 3.718
3 : USD 3.341
7 : USD 2.691
17 : USD 2.548
250 : USD 2.483

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Vf - Forward Voltage
Max Surge Current
Recovery Time
Features Of Semiconductor Devices
Product
Max Load Current
Radiator Thickness
Kind Of Package
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Additional Infomation About Product

STTH12T06 600 V tandem extra fast diode Datasheet production data Features High voltage rectifier Tandem diodes in series Very low switching losses A K Insulated device with internal ceramic Equal thermal conditions for both 300 V diodes Static and dynamic equilibrium of internal diodes are warranted by design Insulated package: A Capacitance: 7 pF K Insulated voltage: 2500 V rms TO-220AC ins STTH12T06DI Description This device is part of ST s second generation of 600 V tandem diodes. It has ultralow switching- losses with a minimized Q (6.5 nC) that makes RR it perfect for use in circuits working in hard- Table 1. Device summary switching mode. In particular the V /Q trade-off F RR positions this device between standard ultrafast Symbol Value diodes and silicon-carbide Schottky rectifiers in I 12 A terms of price/performance ratio. F(AV) V 600 V RRM The device offers a new positioning giving more flexibility to power-circuit designers looking for t (typ) 15 ns rr good performance while still respecting cost I (typ) 2.3 A RM constraints. V (typ) 2.05 V F Featuring ST s Turbo 2 600 V technology, the I 65 A device is particularly suited as a boost diode in FRM continuous conduction mode power factor T (max) 175 C j correction circuits. May 2013 Doc ID024431 Rev1 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH12T06 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit T from 25 to 150 C 600 j V Repetitive peak reverse voltage V RRM T = -40 C 550 j I Forward rms current 22 A F(RMS) T = 75 C I Average forward current, = 0.5 12 A c F(AV) t = 10 ms sinusoidal I Surge non repetitive forward current 90 A p FSM I Repetitive peak forward current T = 75 C, = 0.1 65 A c FRM T Storage temperature range -65 to +175 C stg T Operating junction temperature -40 to +175 C j Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 2.4 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 20 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 40 400 j T = 25 C 2.95 j (2) V Forward voltage drop I = 12A V F F T = 150 C 2.05 2.55 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.75 x I + 0.0667 x I F(AV) F (RMS) 2/9 Doc ID024431 Rev1

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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