Product Information

STTH1602CGY-TR

STTH1602CGY-TR electronic component of STMicroelectronics

Datasheet
Rectifiers DFD THYR TRIAC & RECTIFIER

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 0.5668 ea
Line Total: USD 1133.6

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2000
Multiples : 2000

Stock Image

STTH1602CGY-TR
STMicroelectronics

2000 : USD 0.7792

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

STTH1602CGY-TR
STMicroelectronics

1 : USD 4.4273
10 : USD 1.5948

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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STTH1602C-Y Automotive high efficiency ultrafast diode Datasheet - production data Description A1 K Dual center tap rectifier suited for switch mode power supplies and high frequency DC to DC A2 converters. 2 Packaged in D PAK, this device is especially K intended for use in low voltage, high frequency inverters, freewheeling and polarity protection applications for automotive applications. K A2 Table 1: Device summary A1 Symbol Value DPAK I 2 x 8 A F(AV) VRRM 200 V T (max.) 175 C j Features VF (typ.) 0.78 V AEC-Q101 qualified Low losses t (typ.) 21 ns rr Low forward and reverse recovery time Low leakage current High junction temperature V guaranteed from -40 to +175 C RRM PPAP capable December 2017 DocID031016 Rev 1 1/11 www.st.com This is information on a product in full production. Characteristics STTH1602C-Y 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 to +175 C) 200 V I Forward rms current 26 A F(RMS) T = 150 C Per diode 8 C Average forward current = 0.5, IF(AV) A square wave T = 140 C Per device 16 C Surge non repetitive forward IFSM tp = 10 ms sinusoidal 100 A current Tstg Storage temperature range -65 to +175 C T Maximum operating junction temperature range -40 to +175 C j Table 3: Thermal parameter Symbol Parameter Max. value Unit Per diode 2.7 Junction to case Rth(j-c) C/W Per device 1.6 Rth(c) Coupling 0.5 C/W When the diodes 1 and 2 are used simultaneously: T = P x R + P x R j(diode1) (diode1) th(j-c) (per diode) (diode2) th(c) Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 6 (1) I Reverse leakage current V = V A R R RRM T = 125 C - 4 60 j Tj = 25 C - 1.10 I = 8 A F T = 150 C - 0.78 0.90 j (2) VF Forward voltage drop V Tj = 25 C - 1.25 I = 16 A F T = 150 C - 1.05 j Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses, use the following equation: 2 P = 0.75 x IF(AV) + 0.01875 x IF (RMS) 2/11 DocID031016 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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