Product Information

STTH3012D

STTH3012D electronic component of STMicroelectronics

Datasheet
Rectifiers Ultrafast recovery 1200 V diode

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.0216 ea
Line Total: USD 3.02

970 - Global Stock
Ships to you between
Thu. 16 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

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STTH3012D
STMicroelectronics

1 : USD 3.0216
10 : USD 2.8679
25 : USD 2.7485
50 : USD 2.6935
100 : USD 2.6935
1000 : USD 2.6935

970 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 4
Multiples : 1

Stock Image

STTH3012D
STMicroelectronics

4 : USD 3.0216
10 : USD 2.8679
25 : USD 2.7485
50 : USD 2.6935

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
Height
Length
Termination Style
Width
Cnhts
Hts Code
Mxhts
Product Type
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STTH3012 Ultrafast recovery - 1200 V diode Main product characteristics A K I 30 A F(AV) V 1200 V RRM T 175 C j A V (typ) 1.30 V F K t (typ) 57 ns rr DO-247 STTH3012W Features and benefits Ultrafast, soft recovery Very low conduction and switching losses A High frequency and/or high pulsed current operation K TO-220AC High reverse voltage capability STTH3012D High junction temperature Description The high quality design of this diode has Order codes produced a device with low leakage current, regularly reproducible characteristics and intrinsic Part Number Marking ruggedness. These characteristics make it ideal for heavy duty applications that demand long term STTH3012D STTH3012D reliability. STTH3012W STTH3012W Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/9 www.st.com 9Characteristics STTH3012 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM I RMS forward current 50 A F(RMS) I Average forward current, = 0.5 T = 105 C 30 A F(AV) c I Repetitive peak forward current t = 5 s, F = 5 kHz square 300 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 210 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal parameters Symbol Parameter Value Unit R Junction to case 0.95 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 20 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 15 150 j T = 25 C 2.1 j T = 125 C I = 25 A 1.25 1.9 j F T = 150 C 1.20 1.8 j (2) V Forward voltage drop V F T = 25 C 2.25 j T = 125 C I = 30 A 1.35 2.05 j F T = 150 C 1.30 1.95 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.60 x I + 0.012 I F(AV) F (RMS) 2/9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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