STTH30L06 Datasheet 600 V ultrafast rectifier Features A K Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Applications A Telecom power supply K OBC Industrial equipments K K Switching diode A A Description A A The STTH30L06, which is using ST Turbo 2 600 V technology, is specially suited for DPAK use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode. Product status STTH30L06 Product summary I 30 A F(AV) V 600 V RRM T (max.) 175 C j V (typ.) 1.00 V F t (max.) 65 ns rr DS3995 - Rev 8 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STTH30L06 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 50 A F(RMS) I Average forward current = 0.5, square wave T = 120 C 30 A F(AV) C I Surge non repetitive forward current t = 10 ms sinusoidal 300 A FSM p T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal resistance parameter Symbol Parameter Value Unit R Junction to case 1.1 C/W th(j-c) For more information, please refer to the following application note: AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 25 j (1) I Reverse leakage current V = V A R R RRM T = 150 C - 80 800 j T = 25 C - 1.55 j (2) V Forward voltage drop I = 30 A V F F T = 150 C - 1.00 1.25 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p 2 To evaluate the conduction losses, use the following equation: P = 0.95 x I + 0.010 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I = 0.5 A, I = 0.25 A, I = 1 A - 65 F rr R t Reverse recovery time T = 25 C ns rr j I = 1 A, V = 30 V,dI /dt = 50 A/s - 65 90 F R F t T = 25 C I = 30 A, V = 1.1 x V , dI /dt = 100 A/s Forward recovery time - 500 ns fr j F FR Fmax F V T = 25 C I = 30 A, V = 1.1 x V ,dI /dt = 100 A/s Peak forward voltage - 2.5 V FP j F FR Fmax F I T = 125 C I = 30 A, V = 400 V, dI /dt = 100 A/s Reverse recovery current - 11.5 16 A RM j F R F DS3995 - Rev 8 page 2/12