Product Information

STTH3012W

STTH3012W electronic component of STMicroelectronics

Datasheet
Rectifiers Ultrafast recovery 1200 V diode

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 2.7729 ea
Line Total: USD 11.09

621 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
621 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

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STTH3012W
STMicroelectronics

1 : USD 2.7729
10 : USD 2.2152
100 : USD 2.1709
250 : USD 2.1709
600 : USD 2.1709

84 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

STTH3012W
STMicroelectronics

1 : USD 5.1597
10 : USD 4.5274
30 : USD 3.9815
100 : USD 3.6029
500 : USD 3.4278
1000 : USD 3.3472

621 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 4
Multiples : 1

Stock Image

STTH3012W
STMicroelectronics

4 : USD 2.7729
10 : USD 2.2152
100 : USD 2.1709

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
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STTH3012 Ultrafast recovery - 1200 V diode Main product characteristics A K I 30 A F(AV) V 1200 V RRM T 175 C j A V (typ) 1.30 V F K t (typ) 57 ns rr DO-247 STTH3012W Features and benefits Ultrafast, soft recovery Very low conduction and switching losses A High frequency and/or high pulsed current operation K TO-220AC High reverse voltage capability STTH3012D High junction temperature Description The high quality design of this diode has Order codes produced a device with low leakage current, regularly reproducible characteristics and intrinsic Part Number Marking ruggedness. These characteristics make it ideal for heavy duty applications that demand long term STTH3012D STTH3012D reliability. STTH3012W STTH3012W Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/9 www.st.com 9Characteristics STTH3012 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM I RMS forward current 50 A F(RMS) I Average forward current, = 0.5 T = 105 C 30 A F(AV) c I Repetitive peak forward current t = 5 s, F = 5 kHz square 300 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 210 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal parameters Symbol Parameter Value Unit R Junction to case 0.95 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 20 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 15 150 j T = 25 C 2.1 j T = 125 C I = 25 A 1.25 1.9 j F T = 150 C 1.20 1.8 j (2) V Forward voltage drop V F T = 25 C 2.25 j T = 125 C I = 30 A 1.35 2.05 j F T = 150 C 1.30 1.95 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.60 x I + 0.012 I F(AV) F (RMS) 2/9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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