STTH30R02DJF-TR STMicroelectronics

STTH30R02DJF Ultrafast recovery diode high efficiency Datasheet production data Features A(1) Suited for DC/DC converts Low losses K High T J A(2) High surge current capability K K High energy avalanche capability 1 mm package thickness ECOPACK 2 compliant component A(2) A(2) Description A(1) A(1) High performance diode suited for high frequency DC to DC converters. Packaged in PowerFLAT PowerFLAT 5x6 5x6, this device is intended for use in low voltage STTH30R02DJF high frequency inverters. Table 1. Device summary Symbol Value I 30 A F(AV) V 200 V RRM T 175 C j V (typ) 0.8 V F t (typ) 27 ns rr TM: PowerFLAT is a trademark of STMicroelectronics March 2012 Doc ID 022761 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH30R02DJF 1 Characteristics Table 2. Absolute ratings (limiting values with anode terminals short-circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I Forward rms current 45 A F(RMS) T = 105 C c I Average forward current 30 A F(AV) = 0.5 t = 10 ms p I Surge non repetitive forward current 300 A FSM sinusoidal T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal parameter Symbol Parameter Maximum Unit R Junction to case 2.0 C/W th(j-c) Table 4. Static electrical characteristics (anode terminals short-circuited) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 10 j (1) I Reverse leakage current V = 200V A R R T = 125 C 10 100 j T = 25 C 11.15 j (2) V Forward voltage drop I = 30 A V F F T = 150 C 0.80 0.95 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the maximum conduction losses use the following equation: 2 P = 0.77 x I + 0.006 I F(AV) F (RMS) 2/9 Doc ID 022761 Rev 1