Product Information

STTH30R02DJF-TR

STTH30R02DJF-TR electronic component of STMicroelectronics

Datasheet
Rectifiers Ultrafast High EFF Recovery Diode

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

155: USD 0.6217 ea
Line Total: USD 96.36

515 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 155  Multiples: 1
Pack Size: 1
Availability Price Quantity
515 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 155
Multiples : 1

Stock Image

STTH30R02DJF-TR
STMicroelectronics

155 : USD 0.6217

2910 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000

Stock Image

STTH30R02DJF-TR
STMicroelectronics

3000 : USD 0.9858

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STTH30R02DJF Ultrafast recovery diode high efficiency Datasheet production data Features A(1) Suited for DC/DC converts Low losses K High T J A(2) High surge current capability K K High energy avalanche capability 1 mm package thickness ECOPACK 2 compliant component A(2) A(2) Description A(1) A(1) High performance diode suited for high frequency DC to DC converters. Packaged in PowerFLAT PowerFLAT 5x6 5x6, this device is intended for use in low voltage STTH30R02DJF high frequency inverters. Table 1. Device summary Symbol Value I 30 A F(AV) V 200 V RRM T 175 C j V (typ) 0.8 V F t (typ) 27 ns rr TM: PowerFLAT is a trademark of STMicroelectronics March 2012 Doc ID 022761 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH30R02DJF 1 Characteristics Table 2. Absolute ratings (limiting values with anode terminals short-circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I Forward rms current 45 A F(RMS) T = 105 C c I Average forward current 30 A F(AV) = 0.5 t = 10 ms p I Surge non repetitive forward current 300 A FSM sinusoidal T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal parameter Symbol Parameter Maximum Unit R Junction to case 2.0 C/W th(j-c) Table 4. Static electrical characteristics (anode terminals short-circuited) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 10 j (1) I Reverse leakage current V = 200V A R R T = 125 C 10 100 j T = 25 C 11.15 j (2) V Forward voltage drop I = 30 A V F F T = 150 C 0.80 0.95 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the maximum conduction losses use the following equation: 2 P = 0.77 x I + 0.006 I F(AV) F (RMS) 2/9 Doc ID 022761 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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