Product Information

STTH3R02QRL

STTH3R02QRL electronic component of STMicroelectronics

Datasheet
Rectifiers high voltage diode

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.22 ea
Line Total: USD 0.22

2357 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2357 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STTH3R02QRL
STMicroelectronics

1 : USD 0.455
10 : USD 0.2982
25 : USD 0.2957
100 : USD 0.2132
250 : USD 0.2111
500 : USD 0.175
1000 : USD 0.0988

2357 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 86
Multiples : 1

Stock Image

STTH3R02QRL
STMicroelectronics

86 : USD 0.1805
100 : USD 0.1019
250 : USD 0.0999

     
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Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
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STTH3R02 Ultrafast recovery diode Datasheet - production data Table 1. Device summary A K I 3 A F(AV) V 200 V RRM T (max) 175 C j AA AA V (typ) 0.7 V F t (typ) 16 ns DO-201AD DO-15 rr KK KK STTH3R02 STTH3R02Q A K SMC STTH3R02S Features Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature Description The STTH3R02 uses ST s new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DO-201AD, DO-15, and SMC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. April 2014 DocID12359 Rev 3 1/9 This is information on a product in full production. www.st.comCharacteristics STTH3R02 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM t = 5 s, F = 5 kHz I Repetitive peak forward current 110 A p FRM DO-201AD / DO-15 70 I Forward rms current A F(RMS) SMC 70 DO-15 T = 50 C lead I Average forward current, = 0.5 DO-201AD T = 90 C 3A F(AV) lead SMC T = 110 C c I Surge non repetitive forward current t = 10 ms Sinusoidal 75 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Maximum lead temperature for soldering during 10 s at 4 mm from T 230 C L case Table 3. Thermal parameters Symbol Parameter Value Unit DO-15 45 Lead Length = 10 mm on infinite R Junction to lead th(j-l) heatsink DO-201AD 30 C/W R Junction to case SMC 20 th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 3 j Reverse leakage (1) I V = V A R R RRM current T = 125 C 3 30 j T = 25 C I = 9 A 1.20 j F T = 25 C 0.89 1.0 j (2) V Forward voltage drop V F T = 100 C I = 3 A 0.76 0.85 j F T = 150 C 0.70 0.80 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.68 x I + 0.04 I F(AV) F (RMS) 2/9 DocID12359 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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