Product Information

STTH512B-TR

STTH512B-TR electronic component of STMicroelectronics

Datasheet
Rectifiers high voltage diode

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.2602 ea
Line Total: USD 650.5

14550 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
13839 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STTH512B-TR
STMicroelectronics

1 : USD 0.4878
10 : USD 0.4846
25 : USD 0.4088
100 : USD 0.3773
250 : USD 0.3458
500 : USD 0.3144
1000 : USD 0.3081
3000 : USD 0.3081
6000 : USD 0.3081

7275 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 2500
Multiples : 2500

Stock Image

STTH512B-TR
STMicroelectronics

2500 : USD 0.294
5000 : USD 0.294

2412 - WHS 3


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

STTH512B-TR
STMicroelectronics

1 : USD 0.8323
10 : USD 0.6893
30 : USD 0.6187
100 : USD 0.5482
500 : USD 0.5058
1000 : USD 0.4837

12675 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 26
Multiples : 1

Stock Image

STTH512B-TR
STMicroelectronics

26 : USD 0.4088
100 : USD 0.3773
250 : USD 0.3458
500 : USD 0.3144
1000 : USD 0.3081

2425 - WHS 5


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 29
Multiples : 1

Stock Image

STTH512B-TR
STMicroelectronics

29 : USD 1.3697
50 : USD 1.294
100 : USD 1.1929
200 : USD 1.1598
500 : USD 1.1519

7275 - WHS 6


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 2500
Multiples : 2500

Stock Image

STTH512B-TR
STMicroelectronics

2500 : USD 0.3423

14550 - WHS 7


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 2500
Multiples : 2500

Stock Image

STTH512B-TR
STMicroelectronics

2500 : USD 0.2602
5000 : USD 0.2569
10000 : USD 0.2517

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
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STTH512 Ultrafast recovery - 1200 V diode Datasheet - production data Description . The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic . ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar . mission-critical systems that require rectification and freewheeling. These diodes also fit into 2 & 7 . & )3 2 7 auxiliary functions such as snubber, bootstrap, and demagnetization applications . The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for 1& this device. 1& Table 1. Device summary . 3 Symbol Value I 5 A F(AV) Features V 1200 V RRM Ultrafast, soft recovery T (max) 175 C j Very low conduction and switching losses V (typ) 1.25 V F High frequency and/or high pulsed current t (typ) 48 ns rr operation High reverse voltage capability High junction temperature ECOPACK 2 compliant component for DPAK on demand Insulated package: TO-220FPAC Insulated voltage: 2000 V sine RMS February 2016 DocID12154 Rev 3 1/13 This is information on a product in full production. www.st.comCharacteristics STTH512 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise stated) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM TO-220AC / TO-220FPAC 30 I RMS forward current A F(RMS) DPAK 10 TO-220AC / DPAK T = 145 C c Average forward current, = 0.5, square I 5A F(AV) wave TO-220FPAC T = 105 C c I Repetitive peak forward current t = 5 s, F = 5 kHz square 60 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 55 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal resistance Symbol Parameter Value Unit TO-220AC / DPAK 2.5 R Junction to case C/W th(j-c) TO-220FPAC 5.8 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 5 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 3 30 j T = 25 C 2.20 j (2) V Forward voltage drop T = 125 C I = 5 A 1.30 2.00 V F j F T = 150 C 1.25 1.90 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.5 x I + 0.08 I F(AV) F (RMS) 2/13 DocID12154 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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