STTH6006TV1 STMicroelectronics

STTH6006TV1 electronic component of STMicroelectronics
STTH6006TV1 STMicroelectronics
STTH6006TV1 Rectifiers
STTH6006TV1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STTH6006TV1 Rectifiers across the USA, India, Europe, Australia, and various other global locations. STTH6006TV1 Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

Part No. STTH6006TV1
Manufacturer: STMicroelectronics
Category: Rectifiers
Description: Rectifiers high voltage diode
Datasheet: STTH6006TV1 Datasheet (PDF)
Price (USD)
100: USD 14.2075 ea
Line Total: USD 1420.75 
Availability : 97
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
100$ 14.2075
200$ 14.065
500$ 13.925
1000$ 13.7862

Availability 97
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 100
Multiples : 100
QtyUnit Price
100$ 14.2075
200$ 14.065
500$ 13.925
1000$ 13.7862

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STTH6006TV1 from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STTH6006TV1 and other electronic components in the Rectifiers category and beyond.

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STTH6006TV Turbo 2 ultrafast - high voltage rectifier Main product characteristics A1 K1 I 2 x 30 A F(AV) V 600 V RRM A2 K2 T 150 C j A1 V (typ) 1.1 V F K1 t (max) 50 ns rr A2 Features and benefits K2 Ultrafast switching ISOTOP Low reverse current STTH6006TV1 Low thermal resistance Reduces conduction and switching losses Insulated voltage: 2500 V RMS Typical package capacitance: 45 pF Description Order codes The STTH6006TV1 uses ST Turbo2 600V technology. This device is specially suited for use Part Number Marking in switching power supplies, and industrial STTH6006TV1 STTH6006TV1 applications such as rectification and PFC boost diode. Table 1. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I RMS forward current 100 A F(RMS) I Average forward current, = 0.5 Per diode T = 70 C 30 A F(AV) c I Surge non repetitive forward current t = 10 ms Sinusoidal 210 A FSM p T Storage temperature range -55 to + 150 C stg (1) T Maximum operating junction temperature 150 C j dP 1. thermal runaway condition for a diode on its own heatsink tot 1 --------------- < -------------------------- dT R j th()j a May 2006 Rev 1 1/7 www.st.comCharacteristics STTH6006TV 1 Characteristics Table 2. Thermal parameters Symbol Parameter Value Unit Per diode 1.6 R Junction to case th(j-c) Total 0.85 C/W R Coupling 0.1 th(c) When the diodes are used simultaneously: T = P x R (per diode) + P x R j(diode1) (diode1) th(j-c) (diode2) th(c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 25 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 80 800 j T = 25 C 1.85 j (2) V Forward voltage drop I = 30 A V F F T = 150 C 1.10 1.40 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.07 x I + 0.011 I F(AV) F (RMS) Table 4. Dynamic characteristics Test conditions Symbol Parameter Min. Typ Max. Unit I = 0.5 A, I = 0.25 A, I = 1 A, F rr R 50 T = 25 C j t Reverse recovery time ns rr I = 1 A, dI /dt = -50 A/s, F F 50 70 V = 30 V, T = 25 C R j I = 30 A, dI /dt = -100 A/s, F F I Reverse recovery current 811 RM V = 400 V, T = 125 C R j I = 30 A dI /dt = 100 A/s F F t Forward recovery time 500 ns fr V = 1.1 x V , T = 25 C FR Fmax j I = 30 A dI /dt = 100 A/s F F V Forward recovery voltage 2.5 V FP V = 1.1 x V , T = 25 C FR Fmax j 2/7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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