STTH802-Y Automotive ultrafast recovery diode Datasheet production data Features A K Very low conduction losses Negligible switching losses K Low forward and reverse recovery time High junction temperature A AEC-Q101 qualified NC Description DPAK STTH802BY-TR The STTH802-Y uses ST s new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits. Table 1. Device summary Packaged in DPAK, this device is intended for use I 8 A in low voltage, high frequency inverters, free F(AV) wheeling and polarity protection for automotive V 200 V RRM application. T 175 C j (max) V (typ) 0.8 V F t (typ) 17 ns rr October 2012 Doc ID 018563 Rev 2 1/7 This is information on a product in full production. www.st.com 7Characteristics STTH802-Y 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I Forward rms current 16 A F(RMS) T = 145 C I Average forward current, = 0.5 8A c F(AV) I Surge non repetitive forward current t = 10 ms sinusoidal 100 A p FSM T Storage temperature range -65 to + 175 C stg T Operating junction temperature range -40 to + 175 C j Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 3.2 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 6 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 6 60 j T = 25 C 0.95 1.05 j (2) V Forward voltage drop I = 8 A V F F T = 150 C 0.8 0.90 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.73 x I + 0.021 I F(AV) F (RMS) Table 5. Dynamic characteristics Test conditions Symbol Parameter Min. Typ. Max. Unit I = 1 A, dI /dt = -50 A/s, F F 25 30 ns V = 30 V, T = 25 C R j t Reverse recovery time rr I = 1 A, dI /dt = -100 A/s, F F 17 22 V = 30 V, T = 25 C R j I = 8 A, dI /dt = -200 A/s, F F I Reverse recovery current 5.5 7 A RM V = 160 V, T = 125 C R j I = 8 A, dI /dt = 50 A/s F F t Forward recovery time 150 ns fr V = 1.1 x V , T = 25 C FR Fmax j I = 8 A, dI /dt = 50 A/s, F F V Forward recovery voltage 1.5 V FP T = 25 C j 2/7 Doc ID 018563 Rev 2