STTH810-Y Automotive ultrafast recovery - high voltage diode Datasheet production data Features A K AEC-Q101 qualified Ultrafast, soft recovery Very low conduction and switching losses K High frequency and/or high pulsed current operation A High reverse voltage capability NC High junction temperature 2 D PAK STTH810GY Description The high quality design of this diode has Table 1. Device summary produced a device with low leakage current, I 8 A regularly reproducible characteristics and intrinsic F(AV) ruggedness. These characteristics make it ideal V 1000 V RRM for heavy duty applications that demand long term T 175 C j reliability like automotive applications. V (typ) 1.30 V F These diodes also fit into auxiliary functions such t (typ) 47 ns rr as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. October 2012 Doc ID 018922 Rev 1 1/8 This is information on a product in full production. www.st.com 8Characteristics STTH810-Y 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM I Forward rms current 30 A F(RMS) I Average forward current, = 0.5 T = 130 C 8 A F(AV) c I Repetitive peak forward current t = 5 s, F = 5 kHz square 100 A FRM p I Surge non repetitive forward current t = 10 ms sinusoidal 60 A FSM p T Storage temperature range -65 to + 175 C stg T Operating junction temperature range -40 to +175 C j Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 2.5 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 5 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 2 20 j T = 25 C 2 j (2) V Forward voltage drop T = 100 C I = 8 A 1.4 1.8 V F j F T = 150 C 1.3 1.7 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.3 x I + 0.05 I F(AV) F (RMS) 2/8 Doc ID 018922 Rev 1