STTH3003CW STMicroelectronics

STTH3003CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS I 2 x 15 A F(AV) V 300 V RRM Tj (max) 175 C V (max) 1 V F trr (max) 40 ns A2 K A1 FEATURES AND BENEFITS TO-247 COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY DESCRIPTION Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247 this device is intended for secondary rectification. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 300 V RRM Repetitive peak reverse voltage I 30 A F(RMS) RMS forward current I 15 A F(AV) Average forward current Tc = 135C Per diode 30 = 0.5 Per device I 140 A FSM Surge non repetitive forward current tp = 10 ms sinusoidal I 7A RSM Non repetitive peak reverse current tp = 20 s square T -65 +175 C stg Storage temperature range Tj +175 C Maximum operating junction temperature October 1999 - Ed: 5A 1/5STTH3003CW THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-c) 2.0 C/W Junction to case Per diode 1.05 Total Rth (c) 0.1 Coupling STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit IR * 40 A Reverse leakage V = 300 V Tj = 25C R current 40 400 Tj = 125C VF ** 1.25 V Forward voltage drop I = 15 A Tj = 25C F 0.85 1 Tj = 125C Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : 2 P = 0.75 x I + 0.017 I F(AV) F (RMS) RECOVERY CHARACTERISTICS Symbol Tests conditions Min. Typ. Max. Unit trr 30 ns I = 0.5 A Irr = 0.25 A I = 1A Tj = 25C F R 40 I = 1 A dI /dt = - 50 A/s V = 30V F F R tfr 300 ns I = 15 A dI /dt = 100 A/s Tj = 25C F F V = 1.1 x VF max. FR VFP 3.5 V S 0.3 - factor Vcc = 200 V I = 15 A Tj = 125C F dI /dt = 200A/s I F 8.5 A RM 2/5