STTH8R03D STMicroelectronics

STTH8R03G/D 300V HYPERFAST RECTIFIER MAJOR PRODUCT CHARACTERISTICS K I 8A F(AV) V 300 V RRM I (typ.) 4A RM Tj (max) 175 C A V (max) 1.3 V F K trr (max) 30 ns TO-220AC STTH8R03D FEATURES AND BENEFITS n Designed for high frequency applications. n Hyperfast recovery competes with GaAs devices. K n Allows size decrease of snubbers and heatsinks. A DESCRIPTION NC The TURBOSWITCH is an ultra high performance diode. 2 D PAK This TURBOSWITCH family, which drastically STTH8R03G cuts losses in associated MOSFET when run at high dIF/dt, is suited for HF OFF-Line SMPS and DC/DC converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 300 V RRM Repetitive peak reverse voltage I 20 A F(RMS) RMS forward current I 8A F(AV) Average forward current Tc = 140C = 0.5 I 80 A FSM Surge non repetitive forward current tp = 10 ms sinusoidal T - 65 + 175 C stg Storage temperature range Tj + 175 C Maximum operating junction temperature February 2001 - Ed: 1H 1/6STTH8R03G/D THERMAL AND POWER DATA Symbol Parameter Value Unit R 2.5 C/W th (j-c) Junction to case STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests conditions Min. Typ. Max. Unit I * 10 A R Reverse leakage V =V Tj = 25C R RRM current 15 100 Tj = 125C V ** 1.8 V F Forward voltage drop I = 8 A Tj = 25C F 1.05 1.3 Tj = 125C Pulse test : * tp=5ms, <2% ** tp = 380 s, <2% To evaluate the maximum conduction losses use the following equation : 2 P=0.9xI + 0.05 I F(AV) F (RMS) RECOVERY CHARACTERISTICS Symbol Tests conditions Min. Typ. Max. Unit trr 13 ns I = 0.5 A Irr = 0.25 A I = 1A Tj = 25C F R 30 I =1A dI /dt=-50A/sV = 30V F F R I 4 5.5 A RM V = 200 V I =8A dI /dt = - 200A/s Tj = 125C R F F S factor 0.4 TURN-ON SWITCHING CHARACTERISTICS Symbol Tests conditions Min. Typ. Max. Unit t 200 ns fr Tj = 25C I =8A dI /dt = 100A/s F F measured at 1.1xV max F V 3.5 V FP Tj = 25C I =8A dI /dt = 100A/s F F 2/6