STTH8R06FP STMicroelectronics

STTH8R06 Turbo 2 ultrafast high voltage rectifier Datasheet - production data Description The STTH8R06, which uses ST Turbo 2 600 V . technology, is specially suited as boost diode in continuous mode power factor corrections and hard switching conditions. Table 1. Device summary Symbol Value I 8 A F(AV) . V 600 V RRM 2 & 7 . & )3 2 7 I (typ) 5.5 A RM . T (max) 175 C j V (typ) 1.4 V F t (max) 25 ns rr 1& 2 & LQVXODWHG 7 . 3 . Features Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching losses Package insulation voltage: TO-220AC Ins: 2500 V sine RMS TO-220FPAC: 2000 V sine RMS April 2015 DocID7688 Rev 8 1/16 This is information on a product in full production. www.st.comCharacteristics STTH8R06 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM 2 TO-220AC / TO-220FPAC / D PAK 30 I Forward current rms A F(RMS) TO-220AC ins. 24 2 TO-220AC / D PAK T = 130 C c Average forward I current = 0.5, TO-220FPAC T = 85 C 8A F(AV) c square wave TO-220AC ins. T = 100 C c I Surge non repetitive forward current t = 10 ms sinusoidal 80 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal resistance Symbol Parameter Value (max) Unit 2 TO-220AC / D PAK 2.2 R Junction to case TO-220FPAC 4.6 C/W th(j-c) TO-220AC ins. 3.8 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 30 j I Reverse leakage current V = V A R R RRM T = 125 C 35 400 j T = 25 C 2.9 j V Forward voltage drop I = 8 A V F F T = 125 C 1.4 1.8 j 2 To evaluate the conduction losses use the following equation: P = 1.16 x I + 0.08 I F(AV) F (RMS) 2/16 DocID7688 Rev 8