Product Information

STTH8R06GY-TR

STTH8R06GY-TR electronic component of STMicroelectronics

Datasheet
STMicroelectronics Rectifiers Auto Turbo 2 AECQ101 8A 600V 1.5VF 42ns

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.846 ea
Line Total: USD 846

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

Stock Image

STTH8R06GY-TR
STMicroelectronics

1000 : USD 0.9773

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STTH8R06GY-TR
STMicroelectronics

1 : USD 4.7379
10 : USD 1.7087

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Product
Cnhts
Hts Code
Mxhts
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STTH8R06-Y Automotive Turbo 2 ultrafast high voltage rectifier Features Ultrafast switching Low reverse recovery current K Low thermal resistance A Reduces switching losses NC AEC-Q101 qualified 2 D PAK STTH8R06G-Y Description The STTH8R06, which uses ST Turbo 2 600 V technology, is specially suited as a boost diode in Table 1. Device summary continuous mode power factor correction and hard switching conditions. This device is also Symbol Value intended for use as a free wheeling diode in I 8 A F(AV) power supplies and other power switching applications. V 600 V RRM T 175 C j V (typ) 1.5 V F t (max) 45 ns rr November 2011 Doc ID 022291 Rev 1 1/8 www.st.com 8Characteristics STTH8R06-Y 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 40 A F(RMS) I Average forward current = 0.5 T = 135 C 8 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 90 A FSM p T Storage temperature range -65 to + 175 C stg T Operating junction temperature range -40 to + 175 C j Table 3. Thermal resistance Symbol Parameter Value (max) Unit R Junction to case 1.9 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 30 j I Reverse leakage current V = V A R R RRM T = 125 C 35 400 j T = 25 C 3.2 j V Forward voltage drop I = 8 A V F F T = 125 C 1.5 1.95 j To evaluate the conduction losses use the following equation: 2 P = 1.35 x I + 0.075 I F(AV) F (RMS) 2/8 Doc ID 022291 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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