STD2NK100Z, STP2NK100Z, STU2NK100Z Datasheet N-channel 1000 V, 6.25 typ., 1.85 A SuperMESH Power MOSFETs in DPAK, TO-220 and IPAK packages Features TAB TAB 3 2 Order code V R max. I Package 1 DS DS(on) D 3 2 IPAK 1 DPAK STD2NK100Z DPAK TAB STP2NK100Z 1000 V 8.5 1.85 A TO-220 STU2NK100Z IPAK Extremely high dv/dt capability 3 TO-220 2 1 100% avalanche tested Gate charge minimized D(2, TAB) Very low intrinsic capacitance Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD2NK100Z STP2NK100Z STU2NK100Z DS5280 - Rev 3 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD2NK100Z, STP2NK100Z, STU2NK100Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 1000 V DS V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 1.85 A D C I Drain current (continuous) at T = 100 C 1.16 A D C (1) I Drain current (pulsed) 7.4 A DM P Total dissipation at T = 25 C 70 W TOT C ESD Gate-source human body model (C = 100 pF, R =1.5 k) 3 kV (2) Peak diode recovery voltage slope 2.5 V/ns dv/dt T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 1.85 A, di/dt 200 A/s, V = 80% V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK R Thermal resistance junction-case 1.79 thj-case (1) R Thermal resistance junction-pcb 50 - - C/W thj-pcb R Thermal resistance junction-ambient 62.5 100 thj-amb 1. When mounted on FR-4 board of 1 inch, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 1.85 A AR (2) E . Single pulse avalanche energy 170 mJ AS 1. Pulse width limited by T . jmax 2. Starting T = 25C, I = I , V = 50 V j D AR DD DS5280 - Rev 3 page 2/23