STU5N65M6 STMicroelectronics

STU5N65M6 N-channel 650 V, 1.15 typ., 4 A MDmesh M6 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STU5N65M6 650 V 1.3 4 A Reduced switching losses 3 2 Lower R x area vs previous generation DS(on) 1 Low gate input resistance 100% avalanche tested Zener-protected IPAK Applications Switching applications Figure 1: Internal schematic diagram Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end- application efficiency. Table 1: Device summary Order code Marking Package Packing STU5N65M6 5N65M6 IPAK Tube May 2016 DocID029218 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STU5N65M6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 IPAK package information ................................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID029218 Rev 2