DMN3025LFDF-7 Diodes Incorporated

DMN3025LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max 0.6mm Profile Ideal for Low Profile Applications D BV R max DSS DS(ON) 2 TA = +25C PCB Footprint of 4mm Low On-Resistance 20.5m VGS = 10V 8.3A Low Input Capacitance 30V Fast Switching Speed 30m V = 4.5V GS 7.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP Description and Applications capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. This new generation MOSFET is designed to minimize the on-state A listing can be found at resistance (R ) yet maintain superior switching performance, DS(ON) DMN3025LFDF Marking Information Site1 S6 = Product Type Marking Code YM = Date Code Marking S6 Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key Year 2017 2018 2019 2020 2021 2022 2023 2024 2025 Code E F G H I J K L M Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Site 2 S6 = Product Type Marking Code YWX = Date Code Marking SO76 Y = Year (ex: 0 = 2020) W = Week (ex: a = week 27 z represents week 52 and 53) X = Internal code (ex: U = Monday) Date Code Key Year 2019 2020 2021 2022 2023 2024 2025 2026 Code 9 0 1 2 3 4 5 6 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z 2 of 7 January 2020 DMN3025LFDF www.diodes.com Diodes Incorporated Datasheet number: DS37737 Rev. 2 - 2 YWX YM