Product Information

STU2N105K5

STU2N105K5 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7053 ea
Line Total: USD 1.71

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 3000
Multiples : 3000

Stock Image

STU2N105K5
STMicroelectronics

3000 : USD 2.3286

0 - WHS 2


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1

Stock Image

STU2N105K5
STMicroelectronics

1 : USD 1.7053
10 : USD 1.4091
30 : USD 1.1971
100 : USD 1.0212
500 : USD 0.9924
1000 : USD 0.9755

0 - WHS 3


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

STU2N105K5
STMicroelectronics

1 : USD 4.648
10 : USD 1.6775
25 : USD 1.6028

0 - WHS 4


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 9
Multiples : 1

Stock Image

STU2N105K5
STMicroelectronics

9 : USD 4.0752

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB 3 Order codes V R max I P DS DS(on) D TOT 1 STD2N105K5 DPAK STP2N105K5 1050 V 8 1.5 A 60 W TAB STU2N105K5 TAB Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) 3 3 2 2 1 1 Ultra low gate charge IPAK TO-220 100% avalanche tested Zener-protected Figure 1. Internal schematic diagram Applications 7 % Switching applications Description * These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 6 AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STD2N105K5 DPAK Tape and reel STP2N105K5 2N105K5 TO-220 Tube STU2N105K5 IPAK November 2014 DocID026321 Rev 3 1/21 This is information on a product in full production. www.st.comContents STD2N105K5, STP2N105K5, STU2N105K5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 4.1 DPAK, STD2N105K5 .11 4.2 TO-220, STP2N105K5 . 14 4.3 IPAK, STU2N105K5 . 16 5 Packaging mechanical data 18 6 Revision history . 20 2/21 DocID026321 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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