STW12NK90Z STMicroelectronics

STW12NK90Z N-channel 900 V, 0.72 , 11 A TO-247 Zener-protected SuperMESH Power MOSFET Features R DS(on) Order code V I Pw DSS D max STW12NK90Z 900 V < 0.88 11 A 230 W Extremely high dv/dt capability 100% avalanche tested 3 2 Gate charge minimized 1 Very low intrinsic capacitance TO-247 Very good manufacturing repeatability Application Switching applications Figure 1. Internal schematic diagram Description This device is made using the SuperMESH Power MOSFET technology that is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. Table 1. Device summary Order code Marking Package Packaging STW12NK90Z W12NK90Z TO-247 Tube April 2011 Doc ID 9615 Rev 6 1/13 www.st.com 13Contents STW12NK90Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 9615 Rev 6