STW13NM50N STMicroelectronics

STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFET 2 2 TO-220 - TO-247 - TO-220FP - I PAK - D PAK Features V R DSS DS(on) Type I D ( Tjmax) max 3 3 2 2 1 1 STB13NM50N 550 V 0.32 12 A TO-220 IPAK STB13NM50N-1 550 V 0.32 12 A (1) STF13NM50N 550 V 0.32 12 A 3 2 1 STP13NM50N 550 V 0.32 12 A TO-247 STW13NM50N 550 V 0.32 12 A 3 3 2 1 1 1. Limited only by maximum temperature allowed TO-220FP DPAK 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Application Switching applications Description This product is realized with the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB13NM50N B13NM50N DPAK Tape and reel STB13NM50N-1 B13NM50N IPAK Tube STF13NM50N F13NM50N TO-220FP Tube STP13NM50N P13NM50N TO-220 Tube STW13NM50N W13NM50N TO-247 Tube March 2008 Rev 3 1/18 www.st.com 18 Obsolete Product(s) - Obsolete Product(s)Contents STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit . 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 16 2/18 Obsolete Product(s) - Obsolete Product(s)