X-On Electronics has gained recognition as a prominent supplier of STW36NM60ND mosfet across the USA, India, Europe, Australia, and various other global locations. STW36NM60ND mosfet are a product manufactured by STMicroelectronics. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

STW36NM60ND

STW36NM60ND electronic component of STMicroelectronics
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See Product Specifications
Part No.STW36NM60ND
Manufacturer: STMicroelectronics
Category:MOSFET
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 190W; TO247
Datasheet: STW36NM60ND Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.4657 ea
Line Total: USD 5.47

Availability - 1
Ships to you between
Fri. 07 Jun to Wed. 12 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

STW36NM60ND More Buying Options & Price Grid(s)

Availability Price Quantity
114 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 4.576
10 : USD 4.5604
25 : USD 4.5266
50 : USD 4.4811
100 : USD 4.4356

1 - WHS 2


Ships to you between
Fri. 07 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 5.4657
10 : USD 4.9301
30 : USD 4.6119
100 : USD 4.2896
500 : USD 4.1426
1000 : USD 4.0741

114 - WHS 3


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 2
Multiples : 1
2 : USD 4.576
10 : USD 4.5604
25 : USD 4.5266
50 : USD 4.4811
100 : USD 4.4356

Read More Specifications

     
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Kind Of Package
Type Of Transistor
Drain Current
Gate-Source Voltage
Drain-Source Voltage
On-State Resistance
Power Dissipation
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Additional Infomation About Product

STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II 2 Power MOSFETs (with fast diode) in D PAK and TO-247 packages Datasheet - production data Features V T R DSS J DS(on) Order codes I D max. max. TAB STB36NM60ND 650 V 0.110 29 A STW36NM60ND 3 Designed for automotive applications and 1 3 2 AEC-Q101 qualified 1 100% avalanche tested 2 D PAK TO-247 Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. Internal schematic diagram Applications Automotive switching applications 4 Description These FDmesh II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior 3 switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. - V Table 1. Device summary Order codes Marking Package Packaging 2 STB36NM60ND 36NM60ND D PAK Tape and reel STW36NM60ND 36NM60ND TO-247 Tube October 2013 DocID023785 Rev 3 1/18 This is information on a product in full production. www.st.com 18Contents STB36NM60ND, STW36NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 17 2/18 DocID023785 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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