STW37N60DM2AG STMicroelectronics

STW37N60DM2AG electronic component of STMicroelectronics
STW37N60DM2AG STMicroelectronics
STW37N60DM2AG MOSFETs
STW37N60DM2AG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STW37N60DM2AG MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW37N60DM2AG MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. STW37N60DM2AG
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: N-Channel 600 V 28A (Tc) 210W (Tc) Through Hole TO-247-3
Datasheet: STW37N60DM2AG Datasheet (PDF)
Price (USD)
1: USD 6.125 ea
Line Total: USD 6.12 
Availability : 582
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 6.125
10$ 3.828
100$ 3.751

Availability 582
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.125
10$ 3.828
100$ 3.751

   
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Qg - Gate Charge
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STW37N60DM2AG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW37N60DM2AG and other electronic components in the MOSFETs category and beyond.

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Image Part-Description
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STW37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STW37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1 capacitance Low on-resistance TO-247 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STW37N60DM2AG 37N60DM2 TO-247 Tube August 2015 DocID028243 Rev 1 1/12 www.st.com This is information on a product in full production. Contents STW37N60DM2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-247 package information ............................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID028243 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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