Product Information

STW5NK100Z

STW5NK100Z electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 1000V; 2.2A; 125W; TO247-3

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 1.0534 ea
Line Total: USD 7.37

0 - Global Stock
MOQ: 7  Multiples: 7
Pack Size: 7
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 600
Multiples : 1

Stock Image

STW5NK100Z
STMicroelectronics

600 : USD 3.5651
1000 : USD 2.8502

0 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 30
Multiples : 30

Stock Image

STW5NK100Z
STMicroelectronics

30 : USD 2.4705
120 : USD 2.379
450 : USD 2.2875
750 : USD 2.2875
1500 : USD 2.2875

0 - WHS 3


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

STW5NK100Z
STMicroelectronics

1 : USD 5.8767
10 : USD 3.8466
25 : USD 3.6329
100 : USD 3.152
600 : USD 2.6819

0 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STW5NK100Z
STMicroelectronics

1 : USD 2.6691
3 : USD 2.4143
9 : USD 1.9449
24 : USD 1.8375
120 : USD 1.7973

0 - WHS 5


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 6
Multiples : 1

Stock Image

STW5NK100Z
STMicroelectronics

6 : USD 2.4899

0 - WHS 6


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 7
Multiples : 7

Stock Image

STW5NK100Z
STMicroelectronics

7 : USD 1.0534
10 : USD 0.9658
100 : USD 0.9465

     
Manufacturer
Product Category
Technology
Mounting
Case
Kind Of Package
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
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STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 , 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3 Power MOSFET Features V DSS Type R max I DS(on) D ( T ) JMAX 3 2 1 STF5NK100Z 1000 V < 3.7 3.5 A TO-220 TO-220FP STP5NK100Z 1000 V < 3.7 3.5 A STW5NK100Z 1000 V < 3.7 3.5 A Extremely high dv/dt capability 100% avalanche tested 3 2 1 Gate charge minimized TO-247 Very low intrinsic capacitances Very good manufacturing repeatibility Applications Figure 1. Internal schematic diagram Switching application D(2) Description The new SuperMESH series of Power MOSFETS is the result of further design improvements on ST s well-established strip- G(1) based PowerMESH layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH devices further complement an already broad range of innovative high voltage MOSFETs, which includes the S(3) AM01476v1 revolutionary MDmesh products. Table 1. Device summary Order code Marking Package Packaging STF5NK100Z F5NK100Z TO-220FP Tube STP5NK100Z P5NK100Z TO-220 Tube STW5NK100Z W5NK100Z TO-247 Tube May 2009 Doc ID 10850 Rev 5 1/15 www.st.com 15 Contents STP5NK100Z, STF5NK100Z, STW5NK100Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Revision history . 14 2/15 Doc ID 10850 Rev 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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