Product Information

STW7N90K5

STW7N90K5 electronic component of STMicroelectronics

Datasheet
MOSFET PTD HIGH VOLTAGE
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

600: USD 1.638 ea
Line Total: USD 982.8

1746 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 600  Multiples: 600
Pack Size: 600

 More Buying Options & Price Grid(s)

Availability Price Quantity
1746 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 600
Multiples : 600

Stock Image

STW7N90K5
STMicroelectronics

600 : USD 1.573
1200 : USD 1.573
1800 : USD 1.573
2400 : USD 1.573
3000 : USD 1.573

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STW7N90K5 Datasheet N-channel 900 V, 0.72 typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package Features Order code V R max. I DS DS(on ) D STW7N90K5 900 V 0.81 7 A Industrys lowest R x area DS(on) 3 Industrys best FoM (figure of merit) 2 1 Ultra-low gate charge 100% avalanche tested TO-247 Zener-protected D(2, TAB) Applications Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) AM01475V1 Product status STW7N90K5 Device summary Order code STW7N90K5 Marking 7N90K5 Package TO-247 Packing Tube DS11871 - Rev 2 - February 2018 www.st.com For further information contact your local STMicroelectronics sales office.STW7N90K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 7 A D C I Drain current (continuous) at T = 100 C 4.4 A D C (1) I Drain current (pulsed) 28 A D P Total dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Operating junction temperature range j - 55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area 2. I 7 A, di/dt 100 A/s V peak < V V = 450 V SD DS (BR)DSS, DD 3. V 720 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 2.4 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 230 mJ AS j D AR DD DS11871 - Rev 2 page 2/12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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